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Número de pieza | MMBZ27VAL | |
Descripción | Low capacitance unidirectional double ESD protection diodes | |
Fabricantes | NXP Semiconductors | |
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No Preview Available ! MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Rev. 02 — 10 December 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1. Product overview
Type number
Package
NXP
MMBZ5V6AL
SOT23
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
JEDEC
TO-236AB
Configuration
dual common anode
1.2 Features
Unidirectional ESD protection of
ESD protection up to 30 kV (contact
two lines
discharge)
Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD)
Low diode capacitance: Cd ≤ 280 pF
Rated peak pulse power: PPPM = 40 W
Ultra low leakage current: IRM = 5 nA
IEC 61643-321
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Automotive electronic control units
Portable electronics
1 page NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
[1] In accordance with IEC 61643-321 (10/1000 μs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and
standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 7. ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
machine model
Min
[1][2] -
[2] -
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.
Max Unit
30 kV
2 kV
Table 8. ESD standards compliance
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
MMBZXAL_SER_2
Product data sheet
Rev. 02 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 17
5 Page NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
103
IRM
(nA)
102
(1)
006aab841
10
1
10−1
(2)
(3)
10−2
10−3
(4)
10−4
−75
−25
25
75 125 175
Tamb (°C)
(1) MMBZ5V6AL: VRWM = 3 V
(2) MMBZ6V8AL: VRWM = 4.5 V
(3) MMBZ9V1AL: VRWM = 6 V
(4) MMBZ27VAL: VRWM = 22 V
Fig 7. Reverse leakage current as a function of ambient temperature; typical values
I
IPPM
IPP
−VCL −VBR −VRWM
−+
P-N
−IRM
−IR
V
−IPP
−IPPM
006aab324
Fig 8. V-I characteristics for a unidirectional
ESD protection diode
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
−+
−IPP
−IPPM
006aab325
Fig 9. V-I characteristics for a bidirectional
ESD protection diode
MMBZXAL_SER_2
Product data sheet
Rev. 02 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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