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Número de pieza | UG25N120 | |
Descripción | NPT TRENCH IGBT | |
Fabricantes | Unisonic Technologies | |
Logotipo | ||
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No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD
UG25N120
Preliminary
Insulated Gate Bipolar Transistor
1200V NPT TRENCH IGBT
DESCRIPTION
The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar
Transistor. it uses UTC’s advanced technology to provide customers
with high switching speed, high avalanche ruggedness, low saturation
voltage and low switching loss, etc.
The UTC UG25N120 is suitable for the resonant or soft switching
applications.
FEATURES
* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C
* Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C
SYMBOL
1
1
TO-220
TO-247
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UG25N120L-TA3-T
UG25N120G-TA3-T
TO-220
UG25N120L-T47-T
UG25N120G-T47-T
TO-247
Note: Pin Assignment: G: Gate C: Collector E: Emitte
Pin Assignment
123
GCE
GCE
UG25N120L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) T: Tube
(2) TA3: TO-220, T47: TO-247
(3) L: Lead Free, G: Halogen Free
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet UG25N120.PDF ] |
Número de pieza | Descripción | Fabricantes |
UG25N120 | NPT TRENCH IGBT | Unisonic Technologies |
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