(PDF) UG25N120 Datasheet - NPT TRENCH IGBT

Número de pieza	UG25N120
Descripción	NPT TRENCH IGBT
Fabricantes	Unisonic Technologies
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No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD UG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UG25N120 is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C  SYMBOL 1 1 TO-220 TO-247  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UG25N120L-TA3-T UG25N120G-TA3-T TO-220 UG25N120L-T47-T UG25N120G-T47-T TO-247 Note: Pin Assignment: G: Gate C: Collector E: Emitte Pin Assignment 123 GCE GCE UG25N120L-TA3-T (1)Packing Type (2)Package Type (3)Lead Free (1) T: Tube (2) TA3: TO-220, T47: TO-247 (3) L: Lead Free, G: Halogen Free Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-050.a 1 page

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PDF UG25N120 Data sheet ( Hoja de datos )