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PDF UT3413 Data sheet ( Hoja de datos )
| Número de pieza | UT3413 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
UT3413
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTC UT3413 is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UT3413G-AE2-R
UT3413G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
Package
S: Source
SOT-23-3
SOT-23
Pin Assignment
123
SGD
SGD
Packing
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-159.F
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UT3413
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet UT3413.PDF ] | |
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