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PDF PXAC243502FV Data sheet ( Hoja de datos )

Número de pieza PXAC243502FV
Descripción High Power RF LDMOS Field Effect Transistor
Fabricantes Infineon 
Logotipo Infineon Logotipo



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PXAC243502FV
High Power RF LDMOS Field Effect Transistor
350 W, 28 V, 2300 – 2400 MHz
Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET de-
signed for use in power amplifier applications in the 2300 MHz to
2400 MHz frequency band. Features include an asymmetric design
with high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PXAC243502FV
Package H-37275-4
Single-carrier WCDMA
Broadband Performance
VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm,
3GPP WCDMA signal, 10 dB PAR
20
55
18 Efficiency 45
16
Gain
14
35
25
12 15
Features
Asymmetric design
- Main: 150 W P1dB
- Peak: 200 W P1dB
Broadband internal matching
CW performance at 2350 MHz, 28 V
- Ouput power = 250 W P1dB
- Efficiency = 46%
- Gain = 16 dB
Integrated ESD protection
Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
Low thermal resistance
Pb-free and RoHS-compliant
10
2150
2250
2350
2450
Frequency (MHz)
c243502fv-gr3
5
2550
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon production test fixture in Doherty configuration)
VDD = 28 V, VGS(peak) = 1.0 V, IDQ = 850 mA, POUT = 68 W avg, ƒ = 2400 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF
Characteristic
Symbol Min Typ Max
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
hD
ACPR
14.0
42
15.0
45
–32
–26
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.2, 2016-06-22

1 page




PXAC243502FV pdf
PXAC243502FV
Typical RF Performance (cont.)
Pulse CW Performance
at selected VDD
IDQ = 850 mA, ƒ = 2400 MHz
20 Efficiency 60
Gain
15
40
10
5
27
VDD = 24 V
VDD = 28 V
VDD = 32 V
35 43 51
Output Power (dBm)
20
c243502fv-gr6c
0
59
See next page for Load Pull Performance
Small Signal CW
Gain & Input Return Loss
VDD = 28 V, IDQ = 850 mA
18
17
16
15
14
13
12
11
10
2150
Input Return Loss
Gain
2250
2350
2450
Frequency (MHz)
-8
-9
-10
-11
-12
-13
-14
-15
c243502fv-gr7
-16
2550
Data Sheet
5 of 10
Rev. 03.2, 2016-06-22

5 Page










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