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부품번호 NX3P2902B 기능
기능 Logic controlled high-side power switch
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NX3P2902B 데이터시트, 핀배열, 회로
NX3P2902B
Logic controlled high-side power switch
Rev. 1 — 29 April 2013
Product data sheet
1. General description
The NX3P2902B is a high-side load switch which features a low ON resistance P-channel
MOSFET. The MOSFET supports more than 500 mA of continuous current and an
integrated output discharge resistor to discharge the output capacitance when disabled.
Designed for operation from 1.1 V to 3.6 V, it is used in power domain isolation
applications to reduce power dissipation and extend battery life. The enable logic includes
integrated logic level translation making the device compatible with lower voltage
processors and controllers. The NX3P2902B is ideal for portable, battery operated
applications due to low ground current and OFF-state current.
2. Features and benefits
Wide supply voltage range from 1.1 V to 3.6 V
Very low ON resistance:
95 mat a supply voltage of 1.8 V
High noise immunity
Low OFF-state leakage current (2.0 A maximum)
1.2 V control logic at a supply voltage of 3.6 V
High current handling capability (500 mA continuous current)
Internal output discharge resistor
Turn-on slew rate limiting
ESD protection:
HBM JESD22-A114F Class 3A exceeds 4000 V
CDM AEC-Q100-011 revision B exceeds 500 V
Specified from 40 C to +85 C
3. Applications
Cell phone
Digital cameras and audio devices
Portable and battery-powered equipment




NX3P2902B pdf, 반도체, 판매, 대치품
NXP Semiconductors
NX3P2902B
Logic controlled high-side power switch
10. Recommended operating conditions
Table 6. Recommended operating conditions
Symbol Parameter
Conditions
VI
Tamb
input voltage
ambient temperature
11. Thermal characteristics
Min Max Unit
1.1 3.6 V
40 +85 C
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
Typ
[1][2] 130
Unit
K/W
[1] The overall Rth(j-a) can vary depending on the board layout. To minimize the effective Rth(j-a), all pins must have a solid connection to
larger Cu layer areas e.g. to the power and ground layer. In multi-layer PCB applications, the second layer should be used to create a
large heat spreader area right below the device. If this layer is either ground or power, it should be connected with several vias to the top
layer connecting to the device ground or supply. Try not to use any solder-stop varnish under the chip.
[2] Rely on the measurement data given for a rough estimation of the Rth(j-a) in the application. The actual Rth(j-a) value may vary in
applications using different layer stacks and layouts.
12. Static characteristics
Table 8. Static characteristics
VI(VIN) = 0.9 V to 3.6 V, unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
Tamb = 25 C Tamb = 40 C to +85 C Unit
Min Typ Max
Min
Max
VIH HIGH-level EN input
input voltage
VI(VIN) = 1.1 V to 1.3 V
---
1.0
-V
VI(VIN) = 1.3 V to 1.8 V
---
1.2
-V
VI(VIN) = 1.8 V to 3.6 V
---
1.2
-V
VIL LOW-level EN input
input voltage
VI(VIN) = 1.1 V to 1.3 V
---
-
0.3 V
VI(VIN) = 1.3 V to 1.8 V
---
-
0.4 V
VI(VIN) = 1.8 V to 3.6 V
---
-
0.45 V
II input leakage VI(EN) = 0 V or 3.6 V
current
- 0.1 -
-
500 nA
IGND
ground current VI(EN) = 0 V or 3.6 V; VOUT open;
see Figure 5 and Figure 6
---
2
- A
IS(OFF)
OFF-state
leakage
current
VI(VIN) = 3.6 V; VI(EN) = GND;
VI(VOUT) = GND; see Figure 8
- 10 -
-
2000 nA
Rdch
discharge
resistance
VOUT output; VI(VIN) = 3.3 V
- 90 -
-
120
NX3P2902B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 April 2013
© NXP B.V. 2013. All rights reserved.
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NX3P2902B 전자부품, 판매, 대치품
NXP Semiconductors
NX3P2902B
Logic controlled high-side power switch
12.3 ON resistance test circuit and waveforms
VSW
VIH EN
VIN
VI
RON = VSW / ILOAD.
Fig 9. Test circuit for measuring ON resistance
VOUT
GND
ILOAD
001aao350
200
RON
(mΩ)
160
001aao351
(1)
120
(2)
80
(3)
40
-40 -10 20 50 80 110
Tamb (°C)
ILOAD = 100 mA.
(1) VI(VIN) = 1.2 V.
(2) VI(VIN) = 1.8 V.
(3) VI(VIN) = 3.6 V.
Fig 10. ON resistance versus temperature
200
RON
(mΩ)
160
120
001aao352
(1)
(2)
(3)
(4)
(5)
80
40
1.2 2.0 2.8 3.6
VI(VIN) (V)
VI(EN) = VI(VIN); Tamb = 25 C.
(1) ILOAD = 10 mA.
(2) ILOAD = 100 mA.
(3) ILOAD = 250 mA.
(4) ILOAD = 350 mA.
(5) ILOAD = 500 mA.
Fig 11. ON resistance versus input voltage
NX3P2902B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 April 2013
© NXP B.V. 2013. All rights reserved.
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NX3P2902B

Logic controlled high-side power switch

NXP Semiconductors
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