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부품번호 PESD5V0S1USF 기능
기능 Unidirectional ESD protection diode
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PESD5V0S1USF 데이터시트, 핀배열, 회로
PESD5V0S1USF
Unidirectional ESD protection diode
Rev. 1 — 16 July 2012
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one
signal line from the damage caused by ESD and other transients. The device is
encapsulated in a leadless super small DSN0603-2 (SOD962) Surface-Mounted
Device (SMD) package.
1.2 Features and benefits
ESD protection of one line
Super small SMD package
Ultra low leakage current IRM < 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61643-321 (surge); IPPM = 3.5 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 35 42 pF




PESD5V0S1USF pdf, 반도체, 판매, 대치품
NXP Semiconductors
PESD5V0S1USF
Unidirectional ESD protection diode
120
IPP
(%)
80
40
100 % IPP; 8 μs
001aaa630
et
50 % IPP; 20 μs
0
0 10 20 30 40
t (μs)
Fig 1. 8/20 s pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
6. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VRWM
reverse standoff
voltage
- - 5V
IRM reverse leakage current VRWM = 5 V
- 1 100 nA
VBR breakdown voltage IR = 1 mA
678V
Cd diode capacitance f = 1 MHz; VR = 0 V
-
VCL clamping voltage
IPP = 1 A
[1][2] -
IPPM = 3.5 A
[1][2] -
rdyn
dynamic resistance
IR = 10 A
[3] -
35 42
-9
- 11
0.7 -
pF
V
V
[1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
[2] Measured from pin 1 to pin 2.
[3] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
PESD5V0S1USF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 July 2012
© NXP B.V. 2012. All rights reserved.
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PESD5V0S1USF 전자부품, 판매, 대치품
NXP Semiconductors
PESD5V0S1USF
Unidirectional ESD protection diode
7. Application information
The device is designed for the protection of one unidirectional data or signal line from
surge pulses and ESD damage. The device is suitable on lines where the signal polarities
are either positive or negative with respect to ground.
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Fig 9. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
PESD5V0S1USF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 July 2012
© NXP B.V. 2012. All rights reserved.
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PESD5V0S1USF

Unidirectional ESD protection diode

NXP Semiconductors
NXP Semiconductors

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