W15NK50Z Datasheet PDF - STMicroelectronics
| Part Number | W15NK50Z | |
| Description | STW15NK50Z | |
| Manufacturers | STMicroelectronics | |
| Logo |  |
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There is a preview and W15NK50Z download ( pdf file ) link at the bottom of this page. Total 19 Pages | ||
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STP15NK50Z/FP - STB15NK50Z
STB15NK50Z-1 - STW15NK50Z
N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STP15NK50Z
STP15NK50ZFP
STB15NK50Z
STB15NK50Z-1
STW15NK50Z
VDSS
500V
500V
500V
500V
500V
RDS(on) ID
Pw
<0.34Ω 14A 160 W
<0.34Ω 14A 40 W
<0.34Ω 14A 160W
<0.34Ω 14A 160W
<0.34Ω 14A 160W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
123
I2PAK
TO-247
3
1
D2PAK
Internal schematic diagram
Order codes
Part number
STP15NK50Z
STP15NK50ZFP
STB15NK50ZT4
STB15NK50Z
STB15NK50Z-1
STW15NK50Z
January 2007
Marking
P15NK50Z
P15NK50ZFP
B15NK50Z
B15NK50Z
B15NK50Z
W15NK50Z
Rev 4
Package
TO-220
TO-220FP
D2PAK
D2PAK
I2PAK
TO-247
Packaging
Tube
Tube
Tape & reel
Tube
Tube
Tube
1/19
www.st.com
19
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STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z Electrical charac-
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1mA, VGS= 0
VDS = Max rating,
VDS = Max rating @125°C
VGS = ±20V
VDS= VGS, ID = 100µA
VGS= 10V, ID= 7A
500
3
1
50
±10
3.75 4.5
0.30 0.34
V
µA
µA
µA
V
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 7A
12 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2260
264
64
pF
pF
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
150
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=400V, ID = 14A
VGS =10V
76 106 nC
15 nC
40 nC
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=250 V, ID=7A,
RG=4.7Ω, VGS=10V
(see Figure 18)
20 ns
23 ns
62 ns
15 ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
5/19
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for W15NK50Z electronic component. |
| Information | Total 19 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ W15NK50Z.PDF Datasheet ] | |
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