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GTVA261701FA 데이터시트 PDF




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부품번호 GTVA261701FA 기능
기능 Thermally-Enhanced High Power RF GaN HEMT
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GTVA261701FA 데이터시트, 핀배열, 회로
GTVA261701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT
170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
Input Matched
Typical Pulsed CW performance, 2690 MHz, 48 V, single side
- Output power at P3dB = 170 W
- Efficiency = 72%
- Gain = 16 dB
GaN HEMT technology
High power density
High efficiency
RoHS-compliant
Advance Specification Data
Sheets describe products that
are being considered by Infineon
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Infineon about the future
availability of these products.
GTVA261701FA
Package H-37265J-2
Target RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 48 V, IDQ = 200 mA, POUT = 50 W avg, ƒ1 = 2620 MHz, ƒ2 = 2690 MHz, channel bandwidth = 3.84 MHz, peak/average
= 10 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
— 18 — dB
hD
— 47
%
ACPR — –29 — dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification
1 of 4
Rev. 01, 2015-05-29




GTVA261701FA pdf, 반도체, 판매, 대치품
GTVA261701FA V1
Revision History
Revision Date
01 2015-05-29
Data Sheet Type
Advance
Page
All
Subjects (major changes since last revision)
Data Sheet reflects advance specification for product development
i o nWe Listen to Your Comments
tAny information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
aPlease send your proposal (including a reference to this document) to:
cTo request other information, contact us at:
fi+1 877 465 3667 (1-877-GO-LDMOS) USA
s p e c ior +1 408 776 0600 International
a d v a n c eEdition 2015-05-29
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Advance Specification
4 of 4
Rev. 01, 2015-05-29

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부품번호상세설명 및 기능제조사
GTVA261701FA

Thermally-Enhanced High Power RF GaN HEMT

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