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PDF IPW60R160P6 Data sheet ( Hoja de datos )
| Número de pieza | IPW60R160P6 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPW60R160P6 (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor
IPx60R160P6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
1 page  
600VCoolMOS™P6PowerTransistor
IPW60R160P6,IPB60R160P6,IPP60R160P6,
IPA60R160P6
3Thermalcharacteristics
Table3Thermalcharacteristics(NonFullPAK)TO-220,TO-247
Parameter
Symbol
Values
Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
- - 0.71 °C/W -
- - 62 °C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
Tsold
- - 260 °C 1.6mm (0.063 in.) from case for 10s
Table4Thermalcharacteristics(FullPAK)TO-220FP
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
- - 3.67
Thermal resistance, junction - ambient RthJA
- - 80
Soldering temperature, wavesoldering
only allowed at leads
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W leaded
°C 1.6mm (0.063 in.) from case for 10s
Table5ThermalcharacteristicsTO-263
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
Min.
-
-
Thermal resistance, junction - ambient
for SMD version
RthJA
-
Soldering temperature, wave & reflow
soldering allowed
Tsold
-
Values
Typ. Max.
- 0.71
- 62
35 45
- 260
Unit Note/TestCondition
°C/W -
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
°C/W
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
°C reflow MSL1
Final Data Sheet
5 Rev.2.2,2015-07-10
5 Page 
600VCoolMOS™P6PowerTransistor
IPW60R160P6,IPB60R160P6,IPP60R160P6,
IPA60R160P6
Diagram13:Typ.transfercharacteristics
70
60
25 °C
50
40
150 °C
30
20
10
0
02468
VGS[V]
ID=f(VGS);VDS=20V;parameter:Tj
10 12
Diagram14:Typ.gatecharge
10
9
8
120 V
480 V
7
6
5
4
3
2
1
0
14 0 10 20 30
Qgate[nC]
VGS=f(Qgate);ID=11.3Apulsed;parameter:VDD
40
50
Diagram15:Forwardcharacteristicsofreversediode
102
Diagram16:Avalancheenergy
500
450
400
101
125 °C
25 °C
350
300
250
200
100
150
100
50
10-1
0.0
0.5
IF=f(VSD);parameter:Tj
1.0
VSD[V]
1.5
0
2.0 25 50 75 100 125 150
Tj[°C]
EAS=f(Tj);ID=4.1A;VDD=50V
Final Data Sheet
11 Rev.2.2,2015-07-10
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet IPW60R160P6.PDF ] | |
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