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Número de pieza | PMZ290UNE | |
Descripción | N-channel Trench MOSFET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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20 V, N-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - 20 V
-8 -
8V
- - 1A
- 290 380 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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PMZ290UNE
20 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
305 360 K/W
[2] -
150 175 K/W
- - 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
103 017aaa109
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
0.02
0 0.01
10
10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa110
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1
0.05
0
0.02
0.01
10
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ290UNE
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
14 May 2014
5 / 14
5 Page NXP Semiconductors
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMZ290UNE v.1
20140514
PMZ290UNE
20 V, N-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMZ290UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PMZ290UNE.PDF ] |
Número de pieza | Descripción | Fabricantes |
PMZ290UNE | N-channel Trench MOSFET | NXP Semiconductors |
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