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부품번호 | PMZ370UNE 기능 |
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기능 | N-channel Trench MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
PMZ370UNE
30 V, N-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - 30 V
-8 -
8V
- - 900 mA
- 370 490 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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NXP Semiconductors
120
Pder
(%)
80
017aaa123
PMZ370UNE
30 V, N-channel Trench MOSFET
120
Ider
(%)
80
017aaa124
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
10
ID
(A)
1
Limit RDSon = VDS/ID
017aaa566
tp = 1 µs
10-1
DC; Tsp = 25 °C
tp = 10 µs
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
tp = 100 µs
10-2
10-1
IDM = single pulse
1
10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1] -
305 360 K/W
[2] -
150 175 K/W
PMZ370UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 14
4페이지 NXP Semiconductors
PMZ370UNE
30 V, N-channel Trench MOSFET
1.0
ID 4.5 V
(A)
0.8
2.5 V
2V
017aaa567
VGS = 1.8 V
10-3
ID
(A)
017aaa568
10-4
0.6
min typ
max
1.5 V
0.4
10-5
0.2
0
0 0.5
Tj = 25 °C
1V
1.0 1.5 2.0
VDS (V)
10-6
0
0.25 0.50 0.75
Tj = 25 °C; VDS = 5 V
1.00 1.25
VGS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
1.0
RDSon
(Ω)
0.8
0.6
VGS = 1.8 V
017aaa569
2V
2.5 V
3
RDSon
(Ω)
2
017aaa570
0.4 3 V
1
4.5 V
Tj = 25 °C
0.2
0
0 0.2 0.4 0.6 0.8 1.0
ID (A)
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0
01
ID = 500 mA
2
Tj = 150 °C
345
VGS (V)
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMZ370UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 14
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PMZ370UNE | N-channel Trench MOSFET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |