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PDF PMZ390UNE Data sheet ( Hoja de datos )
| Número de pieza | PMZ390UNE | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMZ390UNE
30 V, N-channel Trench MOSFET
12 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
• Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-8 -
8V
[1] - - 0.9 A
- 390 470 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
PMZ390UNE
30 V, N-channel Trench MOSFET
103 aaa-015985
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102
0.2
0.25
0.1
0.05
0.02
0.01
0
10
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-015986
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.2 0.1
0.05
0
0.02
0.01
0.25
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ390UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMZ390UNE v.1
20150312
PMZ390UNE
30 V, N-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMZ390UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 14
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