PDF PNS40010ER Data sheet ( Hoja de datos )

Número de pieza	PNS40010ER
Descripción	standard switching time PN-rectifier
Fabricantes	NXP Semiconductors
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No Preview Available ! PNS40010ER 400 V, 1 A high power density, standard switching time PN-rectifier Rev. 2 — 21 August 2012 Product data sheet 1. Product profile 1.1 General description High power density, standard switching time PN-rectifier with high-efficiency planar technology, encapsulated in a small and flat lead SOD123W Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Forward current IF ≤ 1 A  Reverse voltage VR ≤ 400 V  Standard switching time  Low forward voltage  Low reverse current  Low inductance  Small and flat lead SMD plastic package  Package height typ. 1 mm  High power capability  AEC-Q101 qualified 1.3 Applications  General-purpose rectification  Reverse polarity protection  Standard switching applications 1.4 Quick reference data Table 1. Symbol IF VRRM VR IFSM VF IF(AV) Quick reference data Parameter forward current repetitive peak reverse voltage Conditions Tsp ≤ 160 °C reverse voltage non-repetitive peak forward current forward voltage average forward current Tj(init) = 25 °C; tp = 8 ms; square wave IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C δ = 0.5 ; f = 20 kHz; Tamb ≤ 115 °C; square wave δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C; square wave [1] [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Min Typ Max Unit - - 1.4 A - - 400 V - - 400 V - - 32 A - 0.93 1.1 V - - 1A - - 1A 1 page NXP Semiconductors PNS40010ER 400 V, 1 A high power density, standard switching time PN-rectifier 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.25 10 0.1 0.75 0.33 0.2 0.05 10 0.02 0.01 aaa-003981 10-1 10-3 10-2 10-1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Symbol VF Characteristics Parameter forward voltage Conditions IF = 0.5 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 0.7 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 0.5 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 125 °C IF = 0.7 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 125 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 125 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = -40 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 150 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 175 °C Min Typ Max Unit - 0.89 1.05 V - 0.91 1.07 V - 0.93 1.1 V - 0.76 0.92 V - 0.78 0.95 V - 0.81 0.98 V - 1.01 1.18 V - 0.78 0.95 V - 0.75 0.92 V PNS40010ER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 August 2012 © NXP B.V. 2012. All rights reserved. 5 of 14 5 Page NXP Semiconductors PNS40010ER 400 V, 1 A high power density, standard switching time PN-rectifier 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice PNS40010ER v.2 Modifications: 20120821 Product data sheet • Data sheet status updated - PNS40010ER v.1 20120615 Preliminary data sheet - Supersedes PNS40010ER v.1 - PNS40010ER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 August 2012 © NXP B.V. 2012. All rights reserved. 11 of 14 11 Page

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