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부품번호 | BUK7Y18-75B 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK7Y18-75B
N-channel TrenchMOS standard level FET
1 March 2013
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
2. Features and benefits
• Q101 compliant
• Suitable for standard level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating
3. Applications
• 12 V, 24 V and 42 V loads
• Automotive systems
• DC-to-DC converters
• Engine management
• General purpose power switching
• Motors, lamps and solenoids
• Transmission control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 4
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 12; Fig. 13
Dynamic characteristics
QGD
gate-drain charge
ID = 20 A; VDS = 60 V; VGS = 10 V;
Fig. 14
Min Typ Max Unit
- - 75 V
- - 49 A
- - 105 W
-
13.8 18
mΩ
- 14.24 - nC
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NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
102
IAL
(A)
10
003aac487
(1)
(2)
1
(3)
Fig. 3.
10-1
10-3
10-2
10-1
1 10
tAL (ms)
(1) Single pulse; Tj = 25°C.
(2) Single pulse; Tj = 150°C.
(3) Repetitive.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
103 003aad516
ID (A)
102
Limit RDSon = VDS / ID
tp = 10 µs
100 µs
10
DC 1 ms
1
10 ms
100 ms
10-1
1
10 102 103
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
- - 1.42 K/W
BUK7Y18-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 March 2013
© NXP B.V. 2013. All rights reserved
4 / 13
4페이지 NXP Semiconductors
BUK7Y18-75B
N-channel TrenchMOS standard level FET
56
gfs
(S)
44
003aad511
32
20
0
20 40 60
ID (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values.
40
ID
(A)
30
003aad552
20
10
Tj = 175 °C
25 °C
0
0 2 4 VGS (V) 6
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
5
VGS(th)
(V)
4
3
2
1
max
typ
min
03aa32
10- 1
ID
(A)
10- 2
10- 3
10- 4
10- 5
03aa35
min typ max
0
- 60
0
60 120 180
Tj (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
10- 6
0246
VGS (V)
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
BUK7Y18-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 March 2013
© NXP B.V. 2013. All rights reserved
7 / 13
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BUK7Y18-75B | N-channel TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |