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BUK7907-55ATE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7907-55ATE
기능 N-channel TrenchPLUS standard level FET
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BUK7907-55ATE 데이터시트, 핀배열, 회로
BUK7907-55ATE
N-channel TrenchPLUS standard level FET
Rev. 03 — 9 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Q101 compliant
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ 12 V and 24 V high power motor
drives
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
ID
Ptot
Tj
RDSon
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C; see Figure 2; see Figure 3
Tmb = 25 °C; see Figure 1
VGS = 10 V; ID = 50 A; Tj = 175 °C; see Figure 7;
see Figure 8
VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7;
see Figure 8
SF(TSD) temperature sense diode IF = 250 µA; Tj > -55 °C; Tj < 175 °C
temperature coefficient
VF(TSD) temperature sense diode IF = 250 µA; Tj = 25 °C
forward voltage
Min
-
[1] -
-
-55
-
-
-1.4
648
Typ Max Unit
- 55 V
- 140 A
- 272 W
- 175 °C
- 14 m
5.8 7
m
-1.54 -1.68 mV/K
658 668 mV
[1] Current is limited by power dissipation chip rating.




BUK7907-55ATE pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7907-55ATE
N-channel TrenchPLUS standard level FET
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
160
03ni63
ID
(A)
120
80
Capped at 75A due to package
40
0
0 50 100 150 200
Tmb (°C)
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
10
DC
03nf55
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
1
1 10 102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7907-55ATE_3
Product data sheet
Rev. 03 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK7907-55ATE 전자부품, 판매, 대치품
NXP Semiconductors
BUK7907-55ATE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min Typ Max Unit
LD internal drain inductance
LS internal source inductance
Source-drain diode
from upper edge of drain mounting base to
center of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
-
-
2.5 -
7.5 -
nH
nH
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
- 0.85 1.2 V
trr
reverse recovery time
IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
-
80 -
ns
Qr recovered charge
VDS = 30 V; Tj = 25 °C
- 200 - nC
BUK7907-55ATE_3
Product data sheet
Rev. 03 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK7907-55ATE

N-channel TrenchPLUS standard level FET

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