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부품번호 | BUK7909-75AIE 기능 |
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기능 | N-channel TrenchPLUS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 75 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 120 A
see Figure 2; see Figure 3
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 50 A;
Tj = 25 °C; see Figure 7;
see Figure 8
- 8 9 mΩ
ID/Isense ratio of drain current Tj > -55 °C; Tj < 175 °C;
to sense current
VGS > 10 V
450 500 550
[1] Current is limited by power dissipation chip rating.
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
120
Pder
(%)
80
40
03na19
120
ID
(A)
80
Capped at 75 A due to package
40
03ni95
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
10
DC
1
1 10
0
0 50 100 150 200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature
03ni96
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102 VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
- 0.85 1.2 V
- 75 - ns
- 270 - nC
350
03ni80
ID
(A)
10
20
9
8.5
8
label is VGS (V)
280 7.5
210 7
6.5
140
6
70 5.5
5
4.5
0
0 2 4 6 8 VDS (V)10
16
RDSon
(mΩ |