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BUK7909-75AIE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7909-75AIE
기능 N-channel TrenchPLUS standard level FET
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BUK7909-75AIE 데이터시트, 핀배열, 회로
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Reduced component count due to
integrated current sensor
„ Suitable for standard level gate drive
sources
1.3 Applications
„ Electrical Power Assisted Steering
(EPAS)
„ Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
- - 75 V
ID drain current
VGS = 10 V; Tmb = 25 °C; [1] - - 120 A
see Figure 2; see Figure 3
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 50 A;
Tj = 25 °C; see Figure 7;
see Figure 8
- 8 9 m
ID/Isense ratio of drain current Tj > -55 °C; Tj < 175 °C;
to sense current
VGS > 10 V
450 500 550
[1] Current is limited by power dissipation chip rating.




BUK7909-75AIE pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
120
Pder
(%)
80
40
03na19
120
ID
(A)
80
Capped at 75 A due to package
40
03ni95
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
10
DC
1
1 10
0
0 50 100 150 200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature
03ni96
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102 VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK7909-75AIE 전자부품, 판매, 대치품
NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
- 0.85 1.2 V
- 75 - ns
- 270 - nC
350
03ni80
ID
(A)
10
20
9
8.5
8
label is VGS (V)
280 7.5
210 7
6.5
140
6
70 5.5
5
4.5
0
0 2 4 6 8 VDS (V)10
16
RDSon
(mΩ)
14
12
10
8
6
5
03ni82
10 15 VGS (V) 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
20
RDSon
(mΩ)
15
VGS = 5.5V 6 V
6.5V 7 V
03ni81
2.4
a
1.6
03nb25
10
8 V 0.8
5 10 V
20 V
0
0 100 200 300 ID (A) 400
0
60 0
60 120 180
Tj (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK7909-75AIE

N-channel TrenchPLUS standard level FET

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