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BUK7909-75ATE PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7909-75ATE
기능 N-channel TrenchPLUS standard level FET
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BUK7909-75ATE 데이터시트, 핀배열, 회로
BUK7909-75ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
1.3 Applications
„ Electrical Power Assisted Steering
(EPAS)
„ Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VDS drain-source voltage
Static characteristics
Conditions
Tj 25 °C; Tj 175 °C
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 50 A;
Tj = 25 °C; see Figure 7;
see Figure 8
SF(TSD)
temperature sense
diode temperature
coefficient
IF = 250 µA; Tj -55 °C;
Tj 175 °C
VF(TSD)
temperature sense
diode forward
voltage
IF = 250 µA; Tj = 25 °C
Min Typ Max Unit
- - 75 V
- 8 9 m
-1.4 -1.54 -1.68 mV/K
648 658 668 mV




BUK7909-75ATE pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7909-75ATE
N-channel TrenchPLUS standard level FET
120
Pder
(%)
80
40
03na19
120
ID
(A)
80
Capped at 75 A due to package
40
03ni95
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
102
Capped at 75 A due to package
10
DC
1
1 10
0
0 50 100 150 200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature
03ni96
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102 VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7909-75ATE_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK7909-75ATE 전자부품, 판매, 대치품
NXP Semiconductors
BUK7909-75ATE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Source-drain diode
VDS = 30 V; RL = 1.2 ; VGS = 10 V;
RG(ext) = 10 ; Tj = 25 °C
measured from upper edge of drain
mounting base to centre of die; Tj = 25 °C
measured from source lead to source
bond pad; Tj = 25 °C
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
- 35 - ns
- 108 - ns
- 185 - ns
- 100 - ns
- 2.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 75 - ns
- 270 - nC
BUK7909-75ATE_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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BUK7909-75ATE

N-channel TrenchPLUS standard level FET

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