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PDF MJE13003-H Data sheet ( Hoja de datos )
| Número de pieza | MJE13003-H | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
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UNISONIC TECHNOLOGIES CO., LTD
MJE13003-H
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
FEATURES
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C.
* 900V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
MJE13003L-H-x-T60-K
MJE13003G-H-x-T60-K
MJE13003L-H-x-T6C-A-K
MJE13003G-H--x-T6C-A-K
MJE13003L-H-x-T6C-K
MJE13003G-H-x-T6C-K
MJE13003L-H-x-T6S-K
MJE13003G-H-x-T6S-K
MJE13003L-H-x-T92-B
MJE13003G-H-x-T92-B
MJE13003L-H-x-T92-K
MJE13003G-H-x-T92-K
MJE13003L-H-x-T92-R
MJE13003G-H-x-T92-R
MJE13003L-H-x-T9N-B
MJE13003G-H-x-T9N-B
MJE13003L-H-x-T9N-K
MJE13003G-H-x- T9N-K
MJE13003L-H-x- T9N-R
MJE13003G-H-x- T9N-R
MJE13003L-H-x-TA3-T
MJE13003G-H-x-TA3-T
MJE13003L-H-x-TM3-T
MJE13003G-H-x-TM3-T
MJE13003L-H-x-TN3-R
MJE13003G-H-x-TN3-R
MJE13003L-H-x-TN3-T
MJE13003G-H-x-TN3-T
Package
TO-126
TO-126C
TO-126C
TO-126S
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
TO-92NL
TO-220
TO-251
TO-252
TO-252
Pin Assignment
123
BCE
ECB
BCE
BCE
ECB
ECB
ECB
ECB
ECB
ECB
BCE
BCE
BCE
BCE
Packing
Bulk
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 8
QW-R223-010.B
1 page  
MJE13003-H
NPN SILICON TRANSISTOR
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to switch mode power supplies
and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be
made on each waveform to determine the total switching time. For this reason, the following new terms have been
defined.
tSV = Voltage Storage Time, 90% IB1 to 10% VCLAMP
tRV = Voltage Rise Time, 10 ~ 90% VCLAMP
tFI= Current Fall Time, 90 ~ 10% IC
tTI = Current Tail, 10 ~ 2% IC
tC = Crossover Time, 10% VCLAMP to 10% IC
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation:
PSWT = 1/2 VCCIC (tC) f
In general, tRV + tFI ≈ tC. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this transistor are the inductive switching speeds (tC and tSV) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
2
1
0.7
tR
0.5
Vcc=125V
Ic/IB=5
TJ=25°C
0.3
0.2
tD @ VBE(OFF)=5V
0.1
0.07
0.05
0.03
0.02
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 10
Collector Current, IC (A)
Fig.2 Turn-On Time
20
10
7
5
ts
Vcc=125V
Ic/IB=5
TJ=25°C
3
2
1
0.7
0.5
0.3 tF
0.2
0.1
0.02 0.03 0.050.07 0.1
0.2 0.3 0.5 0.7 1
Collector Current, IC (A)
Fig.3 Turn-Off Time
2
Fig.4 Thermal Response
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R223-010.B
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| PDF Descargar | [ Datasheet MJE13003-H.PDF ] | |
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