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PDF MJE13003-V Data sheet ( Hoja de datos )
| Número de pieza | MJE13003-V | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
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UNISONIC TECHNOLOGIES CO., LTD
MJE13003-V
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
FEATURES
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R204-034.a
1 page  
MJE13003-V
NPN SILICON TRANSISTOR
APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
Resistive
Switching
+125V
Rc
TUT
RB SCOPE
D1
-4.0V
Coil Data :
VCC=20V
Ferroxcube core #6656
VCLAMP=300V
Full Bobbin ( ~ 200 Turns) #20
GAP for 30 mH/2 A
LCOIL=50mH
Output Waveforms
VCC=125V
RC=125Ω
D1=1N5820 or
Equiv.
RC=47Ω
+10.3 V
25μS
0
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
Table 2. Typical Inductive Switching Performance
Ic Tc tsv tRV tFI tTI tc
(A) (°C) (μs) (μs) (μs) (μs) (μs)
0.5
25
100
1.3
1.6
0.23 0.30 0.35 0.30
0.26 0.30 0.40 0.36
1
25 1.5 0.10 0.14 0.05 0.16
100 1.7 0.13 0.26 0.06 0.29
1.5
25
100
1.8 0.07 0.10 0.05 0.16
3 0.08 0.22 0.08 0.28
Note: All Data Recorded in the Inductive Switching
Circuit in Table 1
ICPK
VCLAMP
90% Vclamp 90% Ic
IC tsv tRV tFI tTI
VCE
IB 90% IB1
tc
10% VCLAMP 10%
ICPK
2%
Ic
Time
Fig.1 Inductive Switching Measurements
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 9
QW-R204-034.a
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MJE13003-V.PDF ] | |
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