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PTFC210202FC 데이터시트 PDF




Infineon에서 제조한 전자 부품 PTFC210202FC은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 PTFC210202FC 자료 제공

부품번호 PTFC210202FC 기능
기능 Thermally-Enhanced High Power RF LDMOS FET
제조업체 Infineon
로고 Infineon 로고


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PTFC210202FC 데이터시트, 핀배열, 회로
PTFC210202FC
Thermally-Enhanced High Power RF LDMOS FET
28 W, 28 V, 1800 – 2200 MHz
Description
The PTFC210202FC integrates two independent 10-watt LDMOS
FETs and is designed for use in cellular amplifier applications in the
2110 to 2170 MHz frequency band. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTFC210202FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz
3GPP WCDMA signal,
PAR = 7.5 dB, 3.84 MHz BW
24
60
20 Gain
16
12 Efficiency
40
20
0
8
PAR @ 0.01% CCDF
4
-20
-40
0
28
ptfc210202fc_g1
-60
32 36 40 44
Average Output Power (dBm)
Features
• Input matched
• Typical CW performance, 2170 MHz, 28 V,
combined outputs
- Output power at P1dB = 28 W
- Efficiency = 62%
- Gain = 20.9 dB
• Capable of handling 10:1 VSWR @28 V, 28 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
hD
ACPR
Min
20
26.5
Typ
21
29
–31
Max
–28
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03.4, 2016-06-22




PTFC210202FC pdf, 반도체, 판매, 대치품
Typical Performance (cont.)
CW Performance at various VDD
IDQ = 170 mA, ƒ = 2170 MHz
26 65
24
22 Gain
60
55
20 50
18 45
16 40
14 Efficiency
35
12
VDD = 24 V
30
10
VDD = 28 V
VDD = 32 V
25
8 20ptfc210202fc_g7
32 34 36 38 40 42 44 46 48
Output Power (dBm)
PTFC210202FC
CW Performance
VDD = 28 V, IDQ = 170mA
26 65
24
22 Gain
60
55
20 50
18 45
16 40
14
Efficiency
12
10
2110 MHz
2140 MHz
2170 MHz
35
30
25
8 20ptfc210202fc_g6
34 36 38 40 42 44 46
Output Power (dBm)
Small Signal CW
Gain & Input Return Loss, single side
VDD = 28 V, IDQ = 170 mA
22 0
Gain
20 -5
18 -10
16 -15
14 -20
IRL
12 -25
10
1790
1890
1990 2090 2190
Frequency (MHz)
ptfc210202fc_g8
-30
2290 2390
Data Sheet
4 of 9
Rev. 03.4, 2016-06-22

4페이지










PTFC210202FC 전자부품, 판매, 대치품
PTFC210202FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PTFC210202FC
Test Fixture Part No.
LTN/PTFC210202FC
PCB
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Information
Component
Description
Input
C101, C108
Capacitor, 10 μF
C102, C103
Chip capacitor, 20 pF
C104, C107
Chip capacitor, 5.1 pF
C105, C106
Chip capacitor, 10 μF
R101, R102
Resistor, 10
Suggested Manufacturer P/N
TDK Corporation
ATC
ATC
Taiyo Yuden
Panasonic Electronic Components
C5750X5R1H106K230KA
ATC100A200JW150XB
ATC100A5R1CW250XT
UMK325C7106MM-T
ERJ-8GEYJ100V
Output
C201, C205
C202, C203, C206, C207
C204, C210
C208, C09
R201
Chip capacitor, 20 pF
Chip capacitor, 1.6 pF
Chip capacitor, 10 μF
Capacitor, 100 μF
Resistor, 10
ATC
ATC
Taiyo Yuden
Panasonic Electronic Components
ATC
ATC100A200JW250XT
ATC800A1R6BT250XT
UMK325C7106MM-T
ECA-1HHG101
CR11206T0100J
Pinout Diagram (top view)
S
D1 D2
G1
G2
H-37248-4_pd_10-10-2012
Pin Description
D1 Drain Device 1
D2 Drain Device 2
G1 Gate Device 1
G2 Gate Device 2
S Source (flange)
Lead connections for PTFC210202FC
Data Sheet
7 of 9
Rev. 03.4, 2016-06-22

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관련 데이터시트

부품번호상세설명 및 기능제조사
PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET

Infineon
Infineon

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