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PDF CHZ050A-SEA Data sheet ( Hoja de datos )
| Número de pieza | CHZ050A-SEA | |
| Descripción | GaN HEMT on SiC | |
| Fabricantes | United Monolithic Semiconductors | |
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CHZ050A-SEA
50W C Band HPA
GaN HEMT on SiC
Description
The CHZ050A-SEA is an input and output
internally-matched packaged Gallium Nitride
High Electron Mobility Transistor. It allows
broadband solutions for a variety of RF
power applications in C-band. It is proposed
in a low parasitic, low thermal resistance
package, and doesn’t require any external
matching circuitry.
The CHZ050A-SEA is well suited for pulsed
radar and satcom applications. It is
developed on a 0.5µm gate length GaN
HEMT process, and is available as a
hermetic flange ceramic metal power
package
Main Features
■ Bandwidth : 5.2-5.8 GHz
■ Pulsed operating mode
■ High power: > 50W
■ High Efficiency: up to 45%
■ DC bias: VDS =50V @ ID_Q =400mA
■ MTTF > 106 hours @ Tj=200°C
■ 50 input and output matched
■ External input/output bias tees required
■ RoHS Flange Ceramic package
VDS = 50V, ID_Q = 400mA
Pulse mode (25µs-10%) Pin = 35dBm
PAE
Gain
Pout
Intrinsic performances of the packaged device
Main Electrical Characteristics
Tcase= +25°C, Pulsed mode, F = 5.2-5.8 GHz, VDS=50V, ID_Q=400mA
Symbol
Parameter
Min Typ
GSS Small Signal Gain
13 15
PSAT
PAE
Saturated Output Power
Max Power Added Efficiency
50 60
40 45
GPAE_MAX Associated Gain at Max PAE
12
Max
Unit
dB
W
%
dB
Ref. : DSCHZ050A-SEA4176 - 25 jun 14
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page  
50W C Band HPA
CHZ050A-SEA
Typical Performance on Demonstration Board (Ref. 61499536B)
Measured on evaluation board 61499536B.
Losses of 0.4 dB at input and output are de-embedded.
Tcase = +25°C, RF Pulsed mode , Gate biasing not pulsed
Measured Pout, Gain, PAE & Id
RF pulsed , Biasing not pulsed
VDS = 50V, IDQ = 400mA DC
Gain
Pout
PAE
Id
Measured Pout , PAE & Gain
RF pulsed , Biasing not pulsed
VDS = 50V, IDQ = 400mA DC
PAE@Pin=35dBm
PAE@Pin=39dBm
Pout@Pin=39dBm
Gain@Pin=35 dBm
Gain@Pin=39dBm
Pout@Pin=35dBm
Ref. : DSCHZ050A-SEA4176 - 25 jun 14
5/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page 
50W C Band HPA
Notes
CHZ050A-SEA
Ref. : DSCHZ050A-SEA4176 - 25 jun 14
11/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet CHZ050A-SEA.PDF ] | |
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