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PDF BUK763R4-30B Data sheet ( Hoja de datos )
| Número de pieza | BUK763R4-30B | |
| Descripción | N-channel TrenchMOS intermediate level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 2 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 12; see Figure 13
ID = 75 A; Vsup ≤ 30 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 30 V
[1] - - 75 A
- - 255 W
- 2.9 3.4 mΩ
- - 1.3 J
1 page  
NXP Semiconductors
104
ID
(A)
103
102
10
1
10-1
limit R DSon = VDS/ ID
(1)
DC
1
BUK763R4-30B
N-channel TrenchMOS standard level FET
003aab185
tp = 10 μ s
100 μs
1 ms
10 ms
100 ms
10 VDS (V)
102
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
Min Typ Max Unit
- - 0.59 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
003aab186
P δ = tp
T
single shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK763R4-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK763R4-30B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK763R4-30B v.2
Modifications:
20110421
Product data sheet
-
BUK75_763R4-30B_1
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK763R4-30B separated from data sheet BUK75_763R4-30B_1.
BUK75_763R4-30B_1 20060105
Product specification -
-
BUK763R4-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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