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BUK763R4-30B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK763R4-30B
기능 N-channel TrenchMOS intermediate level FET
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BUK763R4-30B 데이터시트, 핀배열, 회로
BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 2 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 12; see Figure 13
ID = 75 A; Vsup 30 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 30 V
[1] - - 75 A
- - 255 W
- 2.9 3.4 m
- - 1.3 J




BUK763R4-30B pdf, 반도체, 판매, 대치품
NXP Semiconductors
250
ID
(A)
200
150
100
50
0
0
003aab196
(1)
50 100 150 200
Tj (°C)
BUK763R4-30B
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab195
(1)
(2)
(3)
1
10-3
10-2
10-1
1 tAL (ms) 10
Fig 3. Single shot and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK763R4-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK763R4-30B 전자부품, 판매, 대치품
NXP Semiconductors
BUK763R4-30B
N-channel TrenchMOS standard level FET
400
ID
(A) 10
300 20
87
200
003aab187
label is VGS (V)
6.5
6
20
RDSon
(mΩ)
16
label is VGS (V)
5.5
5
6
6.5
12
003aab189
5.5 8
100 5
4.5
4
3.5
0
0 2 4 6 8 VDS (V)10
8
4 10
20
0
0 100 200 300 400
ID (A)
Fig 6.
Tj = 25 °C
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Tj = 25 °C
Drain-source on-state resistance as a function
of drain current; typical values
80
gfs
(S)
60
003aab190
120
ID
(A)
100
80
003aab192
40 60
20
0
0 25 50 75 100
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 8. Forward transconductance as a function of
drain current; typical values
40
Tj = 175 °C
20
Tj = 25 °C
0
0246
VGS (V)
Fig 9.
VDS = 25 V
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK763R4-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK763R4-30B

N-channel TrenchMOS intermediate level FET

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