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Datasheet PJU1NA50 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1PJU1NA50500V N-Channel MOSFET

PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET Voltage 500 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU
Pan Jit International
Pan Jit International		mosfet


PJU Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PJU14P06A60V P-Channel Enhancement Mode MOSFET

PPJU14P06A / PJD14P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-6A<110mΩ  RDS(ON), [email protected],ID@-3A<130mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead fr
Pan Jit International
Pan Jit International		mosfet
2PJU1N60600V N-Channel Enhancement Mode MOSFET

PJU1N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance wi
Pan Jit
Pan Jit		mosfet
3PJU1N80800V N-Channel Enhancement Mode MOSFET

PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In com
Pan Jit International
Pan Jit International		mosfet
4PJU1NA50500V N-Channel MOSFET

PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET Voltage 500 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU
Pan Jit International
Pan Jit International		mosfet
5PJU1NA60A600V N-Channel MOSFET

PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A 600V N-Channel MOSFET Voltage 600 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<7.9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 201
Pan Jit International
Pan Jit International		mosfet
6PJU1NA80800V N-Channel MOSFET

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<16Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65
Pan Jit International
Pan Jit International		mosfet
7PJU2N70700V N-Channel Enhancement Mode MOSFET

PJF2N70 / PJU2N70 700V N-Channel Enhancement Mode MOSFET FEATURES • 700V, RDS(ON)=5.5Ω@VGS=10V, ID=2A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In complian
Pan Jit International
Pan Jit International		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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