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PDF PJW1NA80 Data sheet ( Hoja de datos )
| Número de pieza | PJW1NA80 | |
| Descripción | 800V N-Channel MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
800V N-Channel MOSFET
Voltage
800 V Current
1A
Features
RDS(ON), VGS@10V,ID@0.5A<16Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-220AB
SOT-223
TO-252
TO-251AB
Mechanical Data
Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC
Derate above 25oC
VDS
VGS
ID
IDM
EAS
PD
Operating Junction and
Storage Temperature Range
TJ,TSTG
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
RθJC
RθJA
TO-251AB
34
0.27
3.68
110
TO-220AB
TO-252
800
+30
1
4
23
45 34
0.36
0.27
-55~150
2.78
3.68
62.5
110
Limited only By Maximum Junction Temperature
SOT-223
0.3
1.2
3.3
0.026
UNITS
V
V
A
A
mJ
W
W/ oC
oC
-
37.9 (Note 4)
oC/W
March 10,2014-REV.00
Page 1
1 page  
PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
TYPICAL CHARACTERISTIC CURVES
Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width
Fig.14 PJP1NA80 Normalized Transient Thermal Impedance vs. Pulse Width
Fig.15 PJW1NA80 Normalized Transient Thermal Impedance vs. Pulse Width
March 10,2014-REV.00
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PJW1NA80.PDF ] | |
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