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PDF PJW3N10A Data sheet ( Hoja de datos )
| Número de pieza | PJW3N10A | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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PPJW3N10A
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
2.2 A
SOT-223
Features
RDS(ON), VGS@10V,ID@2.2A<310mΩ
RDS(ON), VGS@4.5V,ID@1A<320mΩ
Low On-Resistance
Low input capacitance
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-223 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.043 ounces, 0.123 grams
Marking: W3N10A
1
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25oC
TA=70oC
TA=25oC
TA=70oC
SYMBOL
VDS
VGS
ID
IDM
PD
Operating Junction and Storage Temperature Range TJ,TSTG
Typical Thermal resistance
- Junction to Ambient, t≦10s (Note 5)
RθJA
LIMIT
100
+20
2.2
1.7
4.4
3.1
2.0
-55~150
40.3
Limited only By Maximum Junction Temperature
UNITS
V
V
A
A
W
oC
oC/W
July 7,2015-REV.00
Page 1
1 page  
PPJW3N10A
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
July 7,2015-REV.00
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PJW3N10A.PDF ] | |
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