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Datasheet PJW4P06A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJW4P06A | 600V P-Channel MOSFET PPJW4P06A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-4.0 A
SOT-223
Features
RDS(ON), VGS@-10V,[email protected]<110mΩ RDS(ON), [email protected],[email protected] A<130mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead |  Pan Jit International | mosfet |
PJW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJW1NA50 | 500V N-Channel MOSFET PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50
500V N-Channel MOSFET
Voltage
500 V Current
1A
Features
RDS(ON), VGS@10V,[email protected]<9Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU Pan Jit International mosfet | | |
| 2 | PJW1NA60A | 600V N-Channel MOSFET PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A
600V N-Channel MOSFET
Voltage
600 V Current
1A
Features
RDS(ON), VGS@10V,[email protected]<7.9Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 201 Pan Jit International mosfet | | |
| 3 | PJW1NA80 | 800V N-Channel MOSFET PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
800V N-Channel MOSFET
Voltage
800 V Current
1A
Features
RDS(ON), VGS@10V,[email protected]<16Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65 Pan Jit International mosfet | | |
| 4 | PJW2P10A | 100V P-Channel Enhancement Mode MOSFET PPJW2P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-1.5 A
SOT-223
Features
RDS(ON), VGS@-10V,[email protected]<650mΩ RDS(ON), [email protected],[email protected] A<700mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead Pan Jit International mosfet | | |
| 5 | PJW3N10A | 100V N-Channel MOSFET PPJW3N10A
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
2.2 A
SOT-223
Features
RDS(ON), VGS@10V,[email protected]<310mΩ RDS(ON), [email protected],ID@1A<320mΩ Low On-Resistance Low input capacitance Lead free in compliance with EU RoHS 2011/65/EU
directive Green molding c Pan Jit International mosfet | | |
| 6 | PJW3P10A | 100V P-Channel MOSFET PPJW3P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-2.6 A
SOT-223
Features
RDS(ON), VGS@-10V,[email protected]<210mΩ RDS(ON), [email protected],ID@-1A<230mΩ High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead fr Pan Jit International mosfet | | |
| 7 | PJW4N06A | 60V N-Channel MOSFET PPJW4N06A
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current
4.0 A
SOT-223
Features
RDS(ON), VGS@10V,[email protected]<100mΩ RDS(ON), [email protected],[email protected]<110mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in compliance with Pan Jit International mosfet | |
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