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Datasheet 1SS380 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1SS380 | Silicon Epitaxial Planar Diode BL Galaxy Electrical
Silicon Epitaxial Planar Diode
FEATURES
z Small surface mounting type. z High speed. z Suitable for high packing density.
Pb
Lead-free
Production specification
1SS380
APPLICATIONS
z High speed switching
ORDERING INFORMATION
Type No.
Marking
1SS380
6D
SOD-323
Package C | Galaxy Electrical | diode |
2 | 1SS380 | SWITCHING DIODE SMD Type
SWITCHING DIODE 1SS380
Diodes
Features
Ultra small mold type. (UMD2) High reliability.
SOD-323
1.7+0.1 -0.1
Unit: mm 0.85+0.05
-0.05
+0.050.3 -0.05
+0.11.3 -0.1
2.6+0.1 -0.1
0.475
0.375
1.0max
+0.050.1 -0.02
Absolute Maximum Ratings Ta = 25
Paremeter Reverse voltage (repetitive | Kexin | diode |
3 | 1SS380 | Silicon Epitaxial Planar Diodes 1SS380
Silicon Epitaxial Planar Diodes
SOD-323
Features
Small surface mounting type. High speed. Suitable for high packing density.
Applications
High speed switching.
Dimensions in inches and (millimeters)
Ordering Information
Type No.
1SS380
Marking 6D
Package Code SOD-323
MAXIMU | LGE | diode |
4 | 1SS380 | Surface Mount Switching Diode relability
1SS 380
40
1 2
SOD-323
WEITRON
http://www.weitron.com.tw
1SS 380
Maximum Ratings
Rating Peak Reverse Voltage DC Reverse Voltage Mean Recfifying Current Peak Forward Current Surge Current (1s) Junction Temperature Storage Temperature
Symbol
VRM
VR Io IFM Isurge Tj
Tstg
Value 40 35 100 | WEITRON | diode |
5 | 1SS380 | Switching diode 1SS380
Diodes
Switching diode
1SS380
!Applications Low leakage switching !External dimensions (Units : mm)
CATHODE MARK 0.3±0.05 0.1
+0.1 −0.05
1.7±0.1
!Construction Silicon epitaxial planar
0.7 1.25±0.1 Model identification label
2.5±0.2
!Features 1) Small surface mounting type. (UMD2) | ROHM Semiconductor | diode |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1SS104 | SILICON PLANAR TYPE DIODE Toshiba Semiconductor diode | | |
2 | 1SS106 | SILICON SCHOTTKY BARRIER DIODE 1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Forward Current Junction T SEMTECH diode | | |
3 | 1SS106 | Silicon Schottky Barrier Diode 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal..
Ordering Information
Type No. 1S Renesas diode | | |
4 | 1SS106 | SMALL SIGNAL SCHOTTKY DIODES R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High temperature solderi JINAN JINGHENG ELECTRONICS diode | | |
5 | 1SS106 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS106 Cathode White 2nd band Wh Hitachi Semiconductor diode | | |
6 | 1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS108 Cathode White 2nd band Black Mark H Hitachi Semiconductor diode | | |
7 | 1SS110 | Silicon Epitaxial Planar Diode for Tuner Band Switch 1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
T Hitachi Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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