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PDF HY1808B Data sheet ( Hoja de datos )
| Número de pieza | HY1808B | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | HOOYI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HY1808B (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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HY1808AP/M/B/PS/PM
Features
• 80V/84A
RDS(ON)= 6.2mΩ (typ.) @ VGS=10V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3S
DS
G
TO-263-2L
Applications
• Power Management for Inverter Systems.
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P
HY1808A
YYÿ XXXJWW G
PS
HY1808A
YYÿ XXXJWW G
M
HY1808A
YYÿ XXXJWW G
PM
HY1808A
YYÿ XXXJWW G
B
HY1808A
YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
PM: TO-3PS-3M
M : TO-220FB-3S
PS: TO-3PS-3L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
150930
1 page  
HY1808AP/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Output Characteristics
160
140
V = 6,7,8,9,10V
GS
120
100
5.5V
80
5V
60
4.5V
40
20
0
01 2 3 4 5 6
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
9.0
8.0
7.0
VGS =10V
6.0
5.0
0
20 40 60 80 100
ID - Drain Current (A)
Drain-Source On Resistance
17
I =42A
DS
15
13
11
9
7
5
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
5 www.hooyi.cc
5 Page 
HY1808AP/M/B/PS/PM
TO-3PS-3L
SYMBOL
A
A1
A2
b
b2
c
D
D1
D2
DEP
E
E1
E2
E3
e
e1
L
L1
P
P1
P2
P3
Q
Q1
Q2
U
θ1
θ2
θ3
MIN
3.36
1.27
1.49
0.77
1.17
0.48
15.50
9.10
0.05
9.88
7.80
6.90
9.90
13.25
-
1.40
3.93
1.60
6.80
4.00
3°
5°
1°
NOM
MAX
3.56
3.76
1.30
1.37
1.54
1.64
0.80
0. 90
1.27
1.36
0.50
0.56
15.70 15.90
9.20
9.30
0.30 REF
0.10
0.20
10.00 10.20
8.00
8.20
7.10
7.30
10.00 10.10
2.54 BSC
5.08 BSC
13.40 13.55
3.00 3.30
6.00 REF
3.20 REF
3.57 REF
1.50
1.60
4.00
4.07
1.70
1.80
7.00
7.20
4.20
4.40
5°
7°
7°
9°
3°
5°
11 www.hooyi.cc
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet HY1808B.PDF ] | |
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