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부품번호 | BF1102R 기능 |
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기능 | Dual N-channel dual gate MOS-FETs | ||
제조업체 | Philips | ||
로고 | |||
전체 16 페이지수
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BF1102; BF1102R
Dual N-channel dual gate
MOS-FETs
Product specification
Supersedes data of 1999 Jul 01
2000 Apr 11
Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per MOS-FET unless otherwise specified
V(BR)DSS drain-source breakdown voltage VG1-S = VG2-S = 0; ID = 10 µA
7−V
V(BR)G1-SS gate 1-source breakdown voltage VGS = VDS = 0; IG1-S = 10 mA
6 15 V
V(BR)G2-SS gate 2-source breakdown voltage VGS = VDS = 0; IG2-S = 5 mA
6 15 V
V(F)S-G1 forward source-gate 1 voltage
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5 1.5 V
V(F)S-G2 forward source-gate 2 voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5 1.5 V
VG1-S(th) gate 1-source threshold voltage VDS = 5 V; VG2-S = 4 V; ID = 100 µA
0.3 1
V
VG2-S(th) gate 2-source threshold voltage VDS = 5 V; VG1-S = 4 V; ID = 100 µA
0.3 1.2 V
IDSX drain-source current
VG2-S = 4 V; VDS = 5 V; RG = 120 kΩ; note 1 12 20 mA
IG1-S
gate 1 cut-off current
VG1-S = 5 V; VG2-S = VDS = 0
− 50 nA
IG2-S
gate 2 cut-off current
VG2-S = 5 V; VG1-S = VDS = 0
− 20 nA
Note
1. RG1 connects gate 1 to VGG = 5 V.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per MOS-FET unless otherwise specified (note 1)
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Xmod
forward transfer admittance Tj = 25 °C
36 43 50 mS
input capacitance at gate 1 f = 1 MHz
2 2.8 3.6 pF
input capacitance at gate 2 f = 1 MHz; (note 2)
− − 7 pF
output capacitance
f = 1 MHz
− 1.6 2.5 pF
reverse transfer capacitance f = 1 MHz
− 30 50 fF
noise figure
f = 800 MHz; YS = YS opt
− 2 2.8 dB
cross-modulation
fw = 50 MHz; funw = 60 MHz; (note 3)
input level for k = 1% at 0 dB AGC
85 −
−
dBµV
input level for k = 1% at 40 dB AGC 100 − − dBµV
Notes
1. Not used MOS-FET: VG1-S = 0; VDS = 0.
2. Gate 2 capacitance of both MOS-FETs.
3. Measured in test circuit of Fig.20.
2000 Apr 11
4
4페이지 Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
40
handbook, halfpage
I G1
(µA)
30
20
10
MGS368
VG1-S = 5 V
4.5 V
4V
3.5 V
3V
0
0 2 4 VG2-S (V) 6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.20.
Fig.11 Gate 1 current as a function of gate 2
voltage; typical values.
handgbaoionk, h0alfpage
reduction
(dB)
−10
MCD968
−20
−30
−40
−50
0 1234
VAGC (V)
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C;
RG1 = 120 kΩ (connected to VGG); see Fig.20.
Fig.12 Typical gain reduction as a function of the
AGC voltage; see Fig.20.
120
handbook, halfpage
Vunw
(dB µV)
110
MGS369
100
90
80
0 20 40 60
gain reduction (dB)
VDS = 5 V; VGG = 5 V; fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C;
RG1 = 120 kΩ (connected to VGG); see Fig.20.
Fig.13 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values.
handbook,2h0alfpage
ID
(mA)
16
MCD969
12
8
4
0
0 10 20 30 40 50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C;
RG1 = 120 kΩ (connected to VGG); see Fig.20.
Fig.14 Drain current as a function of gain
reduction; typical values.
2000 Apr 11
7
7페이지 | |||
구 성 | 총 16 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
BF1102 | Dual N-channel dual gate MOS-FET | NXP Semiconductors |
BF1102R | Dual N-channel dual gate MOS-FETs | Philips |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |