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부품번호 | SQ2325ES 기능 |
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기능 | Automotive P-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 11 페이지수
www.vishay.com
SQ2325ES
Vishay Siliconix
Automotive P-Channel 150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = -10 V
ID (A)
Configuration
SOT-23 (TO-236)
D
3
1
G
Top View
Marking Code: 8Rxxx
2
S
-150
1.77
-0.84
Single
S
G
D
P-Channel MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
SQ2325ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-150
± 20
-0.84
-0.48
-3.7
-2
4.8
1.12
3
1
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
PCB Mount b
SYMBOL
RthJA
RthJF
LIMIT
166
50
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-0188-Rev. B, 16-Feb-15
1
Document Number: 67847
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
ID = 0.5 A
2.1
1.7
VGS = 10 V
VGS = 4.5 V
5.0
4.0
3.0
1.3 2.0
SQ2325ES
Vishay Siliconix
0.9
0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
10
1
TJ = 150 °C
0.1
0.01
TJ = 25 °C
1.0 TJ = 150 °C
0.0
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
- 150
- 160
ID = 250 μA
- 170
- 180
- 190
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
- 200
- 50 - 25
0 25 50 75 100 125 150 175
TJ -Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
1.3
1.0
ID = 250 μA
0.7
0.4 ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
10
IDM Limited
1
Limited by RDS(on)*
0.1
0.01
TC = 25 °C
Single Pulse
100 μs
1 ms
10 ms
BVDSS Limited
100 ms
1s
10 s, DC
0.001
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1000
S15-0188-Rev. B, 16-Feb-15
4
Document Number: 67847
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
Ordering Information
Vishay Siliconix
SOT-23
Ordering codes for the SQ rugged series power MOSFETs in the SOT-23 package:
DATASHEET PART NUMBER
SQ2301ES
OLD ORDERING CODE a
SQ2301ES-T1-GE3
SQ2303ES
SQ2308CES
SQ2309ES
SQ2303ES-T1-GE3
SQ2308CES-T1-GE3
SQ2309ES-T1-GE3
SQ2310ES
SQ2315ES
SQ2318AES
SQ2310ES-T1-GE3
SQ2315ES-T1-GE3
SQ2318AES-T1-GE3
SQ2325ES
SQ2337ES
SQ2348ES
SQ2325ES-T1-GE3
SQ2337ES-T1-GE3
SQ2348ES-T1-GE3
SQ2351ES
SQ2361AEES
SQ2361ES
SQ2351ES-T1-GE3
-
-
SQ2362ES
SQ2389ES
SQ2398ES
-
-
-
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQ2301ES-T1_GE3
SQ2303ES-T1_GE3
SQ2308CES-T1_GE3
SQ2309ES-T1_GE3
SQ2310ES-T1_GE3
SQ2315ES-T1_GE3
SQ2318AES-T1_GE3
SQ2325ES-T1_GE3
SQ2337ES-T1_GE3
SQ2348ES-T1_GE3
SQ2351ES-T1_GE3
SQ2361AEES-T1_GE3
SQ2361ES-T1_GE3
SQ2362ES-T1_GE3
SQ2389ES-T1_GE3
SQ2398ES-T1_GE3
Revision: 25-Aug-15
1 Document Number: 65844
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
SQ2325ES | Automotive P-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |