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SQ2351ES 데이터시트 PDF




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부품번호 SQ2351ES 기능
기능 Automotive P-Channel MOSFET
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SQ2351ES 데이터시트, 핀배열, 회로
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SQ2351ES
Vishay Siliconix
Automotive P-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 4.5 V
RDS(on) () at VGS = - 2.5 V
ID (A)
Configuration
TO-236
(SOT-23)
- 20
0.115
0.205
- 3.2
Single
S
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G1
S2
3D
G
Top View
SQ2351ES
Marking Code: 8Sxxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
P-Channel MOSFET
SOT-23
SQ2351ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 20
± 12
- 3.2
- 1.8
- 2.5
- 12.7
-6
1.8
2
0.67
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJF
LIMIT
175
75
UNIT
°C/W
S12-2312-Rev. B, 01-Oct-12
1
Document Number: 66716
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SQ2351ES pdf, 반도체, 판매, 대치품
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
ID = 1.8 A
1.7
1.4
1.1
VGS = 4.5 V
VGS = 2.5 V
100
10
1
0.1
SQ2351ES
Vishay Siliconix
TJ = 150 °C
TJ = 25 °C
0.8 0.01
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.0
0.8
0.6
0.4
0.2 TJ = 150 °C
0.0
0
TJ = 25 °C
1234
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
0.5
0.4
ID = 250 μA
0.3
0.2
ID = 5 mA
0.1
0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
- 21
ID = 1 mA
- 22
- 23
- 24
- 25
- 26
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2312-Rev. B, 01-Oct-12
4
Document Number: 66716
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQ2351ES 전자부품, 판매, 대치품
www.vishay.com
Ordering Information
Vishay Siliconix
SOT-23
Ordering codes for the SQ rugged series power MOSFETs in the SOT-23 package:
DATASHEET PART NUMBER
SQ2301ES
OLD ORDERING CODE a
SQ2301ES-T1-GE3
SQ2303ES
SQ2308CES
SQ2309ES
SQ2303ES-T1-GE3
SQ2308CES-T1-GE3
SQ2309ES-T1-GE3
SQ2310ES
SQ2315ES
SQ2318AES
SQ2310ES-T1-GE3
SQ2315ES-T1-GE3
SQ2318AES-T1-GE3
SQ2325ES
SQ2337ES
SQ2348ES
SQ2325ES-T1-GE3
SQ2337ES-T1-GE3
SQ2348ES-T1-GE3
SQ2351ES
SQ2361AEES
SQ2361ES
SQ2351ES-T1-GE3
-
-
SQ2362ES
SQ2389ES
SQ2398ES
-
-
-
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQ2301ES-T1_GE3
SQ2303ES-T1_GE3
SQ2308CES-T1_GE3
SQ2309ES-T1_GE3
SQ2310ES-T1_GE3
SQ2315ES-T1_GE3
SQ2318AES-T1_GE3
SQ2325ES-T1_GE3
SQ2337ES-T1_GE3
SQ2348ES-T1_GE3
SQ2351ES-T1_GE3
SQ2361AEES-T1_GE3
SQ2361ES-T1_GE3
SQ2362ES-T1_GE3
SQ2389ES-T1_GE3
SQ2398ES-T1_GE3
Revision: 25-Aug-15
1 Document Number: 65844
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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부품번호상세설명 및 기능제조사
SQ2351ES

Automotive P-Channel MOSFET

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