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SQ2361ES 데이터시트 PDF




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부품번호 SQ2361ES 기능
기능 Automotive P-Channel MOSFET
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SQ2361ES 데이터시트, 핀배열, 회로
www.vishay.com
SQ2361ES
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = -10 V
RDS(on) () at VGS = -4.5 V
ID (A)
Configuration
SOT-23 (TO-236)
D
3
1
G
Top View
Marking Code: 9Dxxx
2
S
-60
0.177
0.246
-2.8
Single
S
G
D
P-Channel MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
SQ2361ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-60
± 20
-2.8
-1.6
-2.5
-11
-12.5
7.8
2
0.67
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount b
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJF
LIMIT
175
75
UNIT
°C/W
S15-1208-Rev. A, 21-May-15
1
Document Number: 66894
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SQ2361ES pdf, 반도체, 판매, 대치품
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
800 10
SQ2361ES
Vishay Siliconix
600
Ciss
400
200
Crss
0
0
Coss
10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
60
10
ID = 6 A
VDS = 30 V
8
6
4
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.0
0.7
ID = 250 μA
0.4
ID = 5 mA
0.1
2 - 0.2
0
02468
Qg - Total Gate Charge (nC)
Gate Charge
1.0
ID = 1.7 A
0.8
10
- 0.5
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
0.25
ID = 1.9 A
0.20
0.6 0.15
0.4
TJ = 150 °C
0.2
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
0.10
TJ = 150 °C
0.05
0.00
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-Source Voltage
S15-1208-Rev. A, 21-May-15
4
Document Number: 66894
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQ2361ES 전자부품, 판매, 대치품
www.vishay.com
Ordering Information
Vishay Siliconix
SOT-23
Ordering codes for the SQ rugged series power MOSFETs in the SOT-23 package:
DATASHEET PART NUMBER
SQ2301ES
OLD ORDERING CODE a
SQ2301ES-T1-GE3
SQ2303ES
SQ2308CES
SQ2309ES
SQ2303ES-T1-GE3
SQ2308CES-T1-GE3
SQ2309ES-T1-GE3
SQ2310ES
SQ2315ES
SQ2318AES
SQ2310ES-T1-GE3
SQ2315ES-T1-GE3
SQ2318AES-T1-GE3
SQ2325ES
SQ2337ES
SQ2348ES
SQ2325ES-T1-GE3
SQ2337ES-T1-GE3
SQ2348ES-T1-GE3
SQ2351ES
SQ2361AEES
SQ2361ES
SQ2351ES-T1-GE3
-
-
SQ2362ES
SQ2389ES
SQ2398ES
-
-
-
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQ2301ES-T1_GE3
SQ2303ES-T1_GE3
SQ2308CES-T1_GE3
SQ2309ES-T1_GE3
SQ2310ES-T1_GE3
SQ2315ES-T1_GE3
SQ2318AES-T1_GE3
SQ2325ES-T1_GE3
SQ2337ES-T1_GE3
SQ2348ES-T1_GE3
SQ2351ES-T1_GE3
SQ2361AEES-T1_GE3
SQ2361ES-T1_GE3
SQ2362ES-T1_GE3
SQ2389ES-T1_GE3
SQ2398ES-T1_GE3
Revision: 25-Aug-15
1 Document Number: 65844
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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