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부품번호 | SQ3461EV 기능 |
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기능 | Automotive P-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 12 페이지수
www.vishay.com
SQ3461EV
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -4.5 V
RDS(on) (Ω) at VGS = -2.5 V
RDS(on) (Ω) at VGS = -1.8 V
ID (A)
Configuration
Package
-12
0.025
0.032
0.043
-8
Single
TSOP-6
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
• Compliant to RoHS Directive 2002/95/EC
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TSOP-6 Single
S
4
D
5
D
6
S
G
1
D
Top View
2
D
3
G
Marking Code: 8UY
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current c
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-12
±8
-8
-6.6
-6.3
-30
-17
14
5
1.67
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Package limited.
PCB Mount b
SYMBOL
RthJA
RthJF
LIMIT
110
30
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-2401-Rev. A, 12-Oct-15
1
Document Number: 62994
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100 30
10 TJ = 150 °C
1
0.1 TJ = 25 °C
24
TC = 25 °C
18
12
SQ3461EV
Vishay Siliconix
TC = - 55 °C
TC = 125 °C
0.01 6
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.5
0.3
0.1
- 0.1
ID = 250 μA
ID = 5 mA
0
0
- 10
- 12
2468
ID - Drain Current (A)
Transconductance
ID = 1 mA
- 14
- 16
10
- 0.3
- 18
- 0.5
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
- 20
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain-to- Source Voltage vs. Junction Temperature
100
IDM Limited
10 Limited by RDS(on)*
100 μs
1
0.1
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, 10 s, DC
BVDSS Limited
0.01
0.01 0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S15-2401-Rev. A, 12-Oct-15
4
Document Number: 62994
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
Ordering Information
Vishay Siliconix
TSOP-6
Ordering codes for the SQ rugged series power MOSFETs in the TSOP-6 package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQ3410EV
SQ3410EV-T1-GE3
SQ3418EV
-
SQ3419AEEV
-
SQ3419EV
-
SQ3426AEEV
-
SQ3426EV
-
SQ3427AEEV
-
SQ3427EV
-
SQ3456BEV
SQ3456BEV-T1-GE3
SQ3457EV
SQ3457EV-T1-GE3
SQ3460EV
SQ3460EV-T1-GE3
SQ3461EV
-
SQ3469EV
SQ3469EV-T1-GE3
SQ3481EV
SQ3481EV-T1-GE3
SQ3985EV
-
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQ3410EV-T1_GE3
SQ3418EV-T1_GE3
SQ3419AEEV-T1_GE3
SQ3419EV-T1_GE3
SQ3426AEEV-T1_GE3
SQ3426EV-T1_GE3
SQ3427AEEV-T1_GE3
SQ3427EV-T1_GE3
SQ3456BEV-T1_GE3
SQ3457EV-T1_GE3
SQ3460EV-T1_GE3
SQ3461EV-T1_GE3
SQ3469EV-T1_GE3
SQ3481EV-T1_GE3
SQ3985EV-T1_GE3
Revision: 08-Oct-15
1 Document Number: 65849
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
SQ3461EV | Automotive P-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |