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PDF SQ4435EY Data sheet ( Hoja de datos )
| Número de pieza | SQ4435EY | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ4435EY
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
Configuration
SO-8
- 30
0.018
0.031
- 15
Single
S
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
Top View
8D
7D
6D
5D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4435EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 30
± 20
- 15
- 8.7
- 6.2
- 60
- 25
31
6.8
2.3
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
85
22
UNIT
°C/W
S11-2109 Rev. B, 31-Oct-11
1
Document Number: 67932
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
SQ4435EY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67932.
S11-2109 Rev. B, 31-Oct-11
5
Document Number: 67932
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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| PDF Descargar | [ Datasheet SQ4435EY.PDF ] | |
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