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부품번호 | BGA622L7 기능 |
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기능 | Silicon Germanium Wide Band Low Noise Amplifier | ||
제조업체 | Infineon | ||
로고 | |||
전체 10 페이지수
Data Sheet, Rev. 2.2, April 2008
BGA622L7
Silicon Germanium Wide Band Low Noise
Amplifier with 2 kV ESD Protection
Small Signal Discretes
BGA622L7
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD
Protection
Feature
• High gain
|S21|2 = 17.5 dB at 1.575 GHz
|S21|2 = 16.8 dB at 1.9 GHz
|S21|2 = 16.2 dB at 2.14 GHz
• Low noise figure, NF = 0.95 dB at 1.575 GHz
• Operating frequency range 0.5 - 6 GHz
• Typical supply voltage: 2.75 V
• On/Off-Switch
• Output-match on chip, input pre-matched
• Low external part count
• Tiny TSLP-7-1 leadless package
• 70 GHz fT - Silicon Germanium technology
• 2 kV HBM ESD protection (Pin-to-Pin)
• Pb-free (RoHS compliant) package
65
4
7
12 3
TSLP-7-1
Applications
• LNA for GSM, GPS, DCS, PCS, UMTS, Bluethooth, ISM and WLAN
9FF
Figure 1 Pin connection
,Q
2XW
2Q2II
N2KP
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Description
The BGA622L7 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium
Technology B7HF. The out-pin is simultaneously used for RF out and On/Off switch. This functionality can be
accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC
level of VCC switches off, it provides an insertion loss of 26 dB together with a high IIP3 up to 24 dBm at GPS
frequencies.
Type
BGA622L7
Package
TSLP-7-1
Marking
BX
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4 Rev. 2.2, 2008-04-14
4페이지 BGA622L7
Electrical Characteristics
3.2
Electrical Characteristics
VCC = 2.75 V, Frequency =
at TA = 25
2.14 GHz,
°C (measured according to
unless otherwise specified
Figure
2)
Table 4 Electrical Characteristics
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Insertion power gain
|S21|2
16.2
dB
Insertion power gain (Off-State)
|S21|2
-23
dB
Input return loss (On-State)
RLin
6
dB
Output return loss (On-State)
RLout
12
dB
Noise figure (ZS = 50 Ω)
F50Ω
1.05
dB
Input third order intercept point1)
(On-State)
IIP3
0
dBm ∆f = 1 MHz,
PIN = -28 dBm
Input third order intercept point1)
(Off-State)
IIP3
22
dBm ∆f = 1 MHz,
PIN = -8 dBm
Input power at 1 dB gain compression P-1dB
-16
dBm
1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement
is 50 Ω from 0.1 to 6 GHz
Data Sheet
7 Rev. 2.2, 2008-04-14
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ BGA622L7.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BGA622L7 | Silicon Germanium Wide Band Low Noise Amplifier | Infineon |
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