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PDF HY1001P Data sheet ( Hoja de datos )
| Número de pieza | HY1001P | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | HOOYI | |
| Logotipo |  |
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HY1001M/P
N-Channel Enhancement Mode MOSFET
Features
• 70V/75A,
RDS(ON)=7.8mΩ (typ.) @ VGS=10V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management for Inverter Systems.
S
D
G
G
D
S
TO-220
D
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1001
ÿ YYWWJ G
Package Code
P : TO220-3L
Date Code
YYWW
Assembly Material
G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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1 page  
HY1001M/P
Typical Operating Characteristics (Cont.)
Output Characteristics
160
V = 6,7,8,9,10V
GS
140
120 5.5V
100
80
60
5V
40
20 4.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
10
9.5
9.0
8.5
8.0
7.5 V =10V
GS
7.0
6.5
6.0
5.5
5.0
0
20 40 60 80 100
ID - Drain Current (A)
Drain-Source On Resistance
17
I =40A
DS
15
13
11
9
7
5
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HY1001P.PDF ] | |
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