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부품번호 | IPW50R190CE 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 14 페이지수
IPW50R190CE,IPP50R190CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation
whilerepresentingacostappealingalternativecomparedtostandard
MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits
ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.
Extremelylowswitchingandconductionlossesmakeswitching
applicationsevenmoreefficient,morecompact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
PG-TO247
PG-TO220
tab
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.19
Ω
ID 24.8 A
Qg.typ
47.2
nC
ID,pulse
63
A
Eoss@400V
4.42
µJ
Type/OrderingCode
IPW50R190CE
IPP50R190CE
Package
PG-TO 247
PG-TO 220
Marking
5R190CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Min.
500
2.50
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.50
-1
10 -
- 100
0.17 0.19
0.45 -
3-
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.51mA
µA
VDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=13V,ID=6.2A,Tj=25°C
VGS=13V,ID=6.2A,Tj=150°C
Ω f=1MHz,opendrain
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
Values
Typ. Max.
1137 -
68 -
56 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...400V
- 251 - pF ID=constant,VGS=0V,VDS=0...400V
-
9.5 -
ns
VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
-
8.5 -
ns
VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
-
54 -
ns
VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
-
7.5 -
ns
VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
-
-
-
-
Values
Typ. Max.
6.1 -
24.5 -
47.2 -
5.4 -
Unit Note/TestCondition
nC VDD=400V,ID=7.7A,VGS=0to10V
nC VDD=400V,ID=7.7A,VGS=0to10V
nC VDD=400V,ID=7.7A,VGS=0to10V
V VDD=400V,ID=7.7A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Final Data Sheet
4 Rev.2.2,2016-06-13
4페이지 500VCoolMOSªCEPowerTransistor
IPW50R190CE,IPP50R190CE
Typ.outputcharacteristicsTj=25°C
80
70
60
50
40
30
20
10
0
0 5 10
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
Typ.outputcharacteristicsTj=125°C
50
20 V
45
40
10 V
35
30
8V
25
7 V 20
15
6V
5.5 V
10
5V 5
4.5 V
0
15 20 0
5 10
VDS[V]
ID=f(VDS);Tj=125°C;parameter:VGS
20 V
10 V
8V
7V
6V
5.5 V
5V
4.5 V
15 20
Typ.drain-sourceon-stateresistance
0.8
Drain-sourceon-stateresistance
0.6
0.7
5.5 V
6.5 V
0.6 5 V 6 V
7V
0.5 10 V
0.4
0.5
0.4
0.3
0.2
98%
typ
0.3 0.1
0.2
0
0.0
10 20 30 40 50
-50 -25 0 25 50 75 100 125 150 175
ID[A]
Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
RDS(on)=f(Tj);ID=6.2A;VGS=13V
Final Data Sheet
7 Rev.2.2,2016-06-13
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ IPW50R190CE.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
IPW50R190CE | MOSFET ( Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |