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PDF PMC85XP Data sheet ( Hoja de datos )
| Número de pieza | PMC85XP | |
| Descripción | 30V P-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
15 May 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET
technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Trench MOSFET technology
• NPN transistor built-in bias resistors
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
3. Applications
• Charging switch for portable devices
• High-side load switch
• USB port overvoltage protection
• Power management in battery-driven portables
• Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
P-channel Trench MOSFET
VDS drain-source voltage Tj = 25 °C
- - -30 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.4 A
P-channel Trench MOSFET; static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C
resistance
- 85 110 mΩ
NPN RET
VCEO
collector-emitter
voltage
Tamb = 25 °C; open base
- - 50 V
IO output current
- - 100 mA
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1 page  
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
Symbol
Rth(j-sp)
NPN RET
Rth(j-a)
Rth(j-sp)
Parameter
Conditions
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Min Typ Max Unit
- 10 15 K/W
[1] -
[2] -
-
233 270 K/W
110 127 K/W
25 30 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard
footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
for drain 6 cm2
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01
1
0
017aaa398
10-1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, standard footprint
1
10 102 103
tp (s)
Fig. 4. P-channel Trench MOSFET: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
PMC85XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 May 2013
© NXP B.V. 2013. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
11. Test information
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
P
t2
duty cycle δ =
t1
t2
t1
Fig. 17. Duty cycle definition
t
006aaa812
12. Package outline
0.77
0.57
2.1 (2×)
1.9 0.54
0.44
(2×)
3
1
2.1
1.9
1.1
0.9
0.3
0.2
Dimensions in mm
Fig. 18. Package outline DFN2020-6 (SOT1118)
4 0.65
(4×)
0.35
6 0.25
(6×)
0.65
max
0.04
max
10-05-31
PMC85XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 May 2013
© NXP B.V. 2013. All rights reserved
11 / 15
11 Page | ||
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| PDF Descargar | [ Datasheet PMC85XP.PDF ] | |
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