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PDF SQD100N03-3M2L Data sheet ( Hoja de datos )
| Número de pieza | SQD100N03-3M2L | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SQD100N03-3m2L
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-252
30
0.0032
0.0039
100
Single
D
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
GDS
Top View
Drain Connected to Tab
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD100N03-3m2L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
30
± 20
100
89
100
150
60
180
136
45
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S13-0452-Rev. A, 04-Mar-13
1
Document Number: 62753
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
SQD100N03-3m2L
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
100 μs
10 ID Limited
Limited by RDS(on)*
1
1 ms
10 ms, 100 ms
1 s, 10 s, DC
TC = 25 °C
0.1 Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
S13-0452-Rev. A, 04-Mar-13
5
Document Number: 62753
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQD100N03-3M2L.PDF ] | |
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