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부품번호 | SQD50P08-28 기능 |
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기능 | Automotive P-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 10 페이지수
SQD50P08-28
Vishay Siliconix
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
ID (A)
Configuration
TO-252
- 80
0.028
- 48
Single
S
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
G
GDS
Top View
Drain Connected to Tab
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD50P08-28-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 80
± 20
- 48
- 28
- 50
- 190
- 45
100
136
45
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD50P08-28
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
ID = 12.5 A
8
VDS = 40 V
6
4
2
2.5
ID = 12.5 A
2.0
1.5
1.0
VGS = 10 V
0
0
100
20 40 60 80
Qg - Total Gate Charge (nC)
Gate Charge
100
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
10
TJ = 150 °C
1
0.16
0.12
0.1
0.01
TJ = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
1.5
1.1
ID = 250 μA
0.7
ID = 5 mA
0.3
0.08
0.04
TJ = 150 °C
0.00
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
- 80
ID = 1 mA
- 85
- 90
- 95
- 0.1
- 100
- 0.5
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
- 105
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
www.vishay.com
4
Document Number: 63215
S11-1871-Rev. A, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
Ordering Information
Vishay Siliconix
DPAK / TO-252 and Reverse DPAK
Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQD07N25-350H
SQD07N25-350H-GE3
SQD100N03-3m2L
SQD100N03-3M2L-GE3
SQD100N03-3m4
SQD100N03-3M4-GE3
SQD100N04-3m6
SQD100N04-3M6-GE3
SQD100N04-3m6L
SQD100N04-3M6L-GE3
SQD10N30-330H
SQD10N30-330H-GE3
SQD15N06-42L
SQD15N06-42L-GE3
SQD19P06-60L
SQD19P06-60L-GE3
SQD23N06-31L
SQD23N06-31L-GE3
SQD25N06-22L
SQD25N06-22L-GE3
SQD25N15-52
SQD25N15-52-GE3
SQD30N05-20L
SQD30N05-20L-GE3
SQD40N06-14L
SQD40N06-14L-GE3
SQD40N10-25
SQD40N10-25-GE3
SQD40P10-40L
SQD40P10-40L-GE3
SQD45P03-12
SQD45P03-12-GE3
SQD50N04-5m6
SQD50N04-5M6-GE3
SQD50N05-11L
SQD50N05-11L-GE3
SQD50N06-09L
SQD50N06-09L-GE3
SQD50N10-8m9L
SQD50N10-8M9L-GE3
SQD50P03-07
SQD50P03-07-GE3
SQD50P04-13L
SQD50P04-13L-GE3
SQD50P04-09L
SQD50P04-09L-GE3
SQD50P06-15L
SQD50P06-15L-GE3
SQD50P08-25L
SQD50P08-25L-GE3
SQD50P08-28
SQD50P08-28-GE3
SQD90P04-9m4L
SQD90P04-9M4L-GE3
SQD97N06-6m3L
SQD97N06-6M3L-GE3
SQR40N10-25
SQR40N10-25-GE3
SQR50N04-3m8
SQR50N04-3M8-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQD07N25-350H_GE3
SQD100N03-3M2L_GE3
SQD100N03-3M4_GE3
SQD100N04-3M6_GE3
SQD100N04-3M6L_GE3
SQD10N30-330H_GE3
SQD15N06-42L_GE3
SQD19P06-60L_GE3
SQD23N06-31L_GE3
SQD25N06-22L_GE3
SQD25N15-52_GE3
SQD30N05-20L_GE3
SQD40N06-14L_GE3
SQD40N10-25_GE3
SQD40P10-40L_GE3
SQD45P03-12_GE3
SQD50N04-5M6_GE3
SQD50N05-11L_GE3
SQD50N06-09L_GE3
SQD50N10-8M9L_GE3
SQD50P03-07_GE3
SQD50P04-13L_GE3
SQD50P04-09L_GE3
SQD50P06-15L_GE3
SQD50P08-25L_GE3
SQD50P08-28_GE3
SQD90P04-9M4L_GE3
SQD97N06-6M3L_GE3
SQR40N10-25_GE3
SQR50N04-3M8_GE3
Revision: 08-Oct-15
1 Document Number: 66957
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
SQD50P08-25L | Automotive P-Channel MOSFET | Vishay |
SQD50P08-28 | Automotive P-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |