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부품번호 | SQJ488EP 기능 |
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기능 | Automotive N-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 11 페이지수
www.vishay.com
SQJ488EP
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
100
0.0210
0.0258
42
Single
PowerPAK® SO-8L Single
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912
D
6.15 mm
1
Top View
5.13 mm
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
1
2S
3S
4S
G
Bottom View
G
N-Channel MOSFET
S
PowerPAK SO-8L
SQJ488EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
TC = 25 °C a
TC = 125 °C
VGS
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
TJ, Tstg
LIMIT
100
± 20
42
24
60
170
5.8
1.68
83
27
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
RthJA
65
°C/W
RthJC
1.8
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S14-2219-Rev. B, 10-Nov-14
1
Document Number: 62846
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5 0.075
ID = 10 A
2.1
0.060
1.7 VGS = 4.5 V
VGS = 10 V
1.3
0.045
0.030
SQJ488EP
Vishay Siliconix
TJ = 150 °C
0.9
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.015
TJ = 25 °C
0.000
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to Source Voltage
100
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
50
TC = 25 °C
40
TC = - 55 °C
30
20 TC = 125 °C
10
0
0 5 10 15 20 25
ID - Drain Current (A)
Transconductance
0.6
0.3
0.0
- 0.3
- 0.6
- 0.9
ID = 5 mA
ID = 250 μA
126
ID = 1 mA
120
114
108
102
- 1.2
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
96
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S14-2219-Rev. B, 10-Nov-14
4
Document Number: 62846
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
Ordering Information
Vishay Siliconix
PowerPAK® SO-8L
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQJ200EP
-
SQJ401EP
SQJ401EP-T1-GE3
SQJ402EP
SQJ402EP-T1-GE3
SQJ403EEP
SQJ403EEP-T1-GE3
SQJ403EP
-
SQJ410EP
SQJ410EP-T1-GE3
SQJ412EP
SQJ412EP-T1-GE3
SQJ422EP
SQJ422EP-T1-GE3
SQJ431EP
SQJ431EP-T1-GE3
SQJ443EP
SQJ443EP-T1-GE3
SQJ456EP
SQJ456EP-T1-GE3
SQJ460AEP
-
SQJ461EP
SQJ461EP-T1-GE3
SQJ463EP
SQJ463EP-T1-GE3
SQJ465EP
SQJ465EP-T1-GE3
SQJ469EP
SQJ469EP-T1-GE3
SQJ486EP
SQJ486EP-T1-GE3
SQJ488EP
SQJ488EP-T1-GE3
SQJ500AEP
SQJ500AEP-T1-GE3
SQJ840EP
SQJ840EP-T1-GE3
SQJ844AEP
SQJ844AEP-T1-GE3
SQJ850EP
SQJ850EP-T1-GE3
SQJ858AEP
SQJ858AEP-T1-GE3
SQJ886EP
SQJ886EP-T1-GE3
SQJ910AEP
SQJ910AEP-T1-GE3
SQJ912AEP
SQJ912AEP-T1-GE3
SQJ940EP
SQJ940EP-T1-GE3
SQJ942EP
SQJ942EP-T1-GE3
SQJ951EP
SQJ951EP-T1-GE3
SQJ952EP
-
SQJ960EP
SQJ960EP-T1-GE3
SQJ963EP
SQJ963EP-T1-GE3
SQJ968EP
SQJ968EP-T1-GE3
SQJ980AEP
SQJ980AEP-T1-GE3
SQJ992EP
SQJ992EP-T1-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQJ200EP-T1_GE3
SQJ401EP-T1_GE3
SQJ402EP-T1_GE3
SQJ403EEP-T1_GE3
SQJ403EP-T1_GE3
SQJ410EP-T1_GE3
SQJ412EP-T1_GE3
SQJ422EP-T1_GE3
SQJ431EP-T1_GE3
SQJ443EP-T1_GE3
SQJ456EP-T1_GE3
SQJ460AEP-T1_GE3
SQJ461EP-T1_GE3
SQJ463EP-T1_GE3
SQJ465EP-T1_GE3
SQJ469EP-T1_GE3
SQJ486EP-T1_GE3
SQJ488EP-T1_GE3
SQJ500AEP-T1_GE3
SQJ840EP-T1_GE3
SQJ844AEP-T1_GE3
SQJ850EP-T1_GE3
SQJ858AEP-T1_GE3
SQJ886EP-T1_GE3
SQJ910AEP-T1_GE3
SQJ912AEP-T1_GE3
SQJ940EP-T1_GE3
SQJ942EP-T1_GE3
SQJ951EP-T1_GE3
SQJ952EP-T1_GE3
SQJ960EP-T1_GE3
SQJ963EP-T1_GE3
SQJ968EP-T1_GE3
SQJ980AEP-T1_GE3
SQJ992EP-T1_GE3
Revision: 07-Oct-15
1 Document Number: 65804
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
SQJ488EP | Automotive N-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |