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PDF SQJ940EP Data sheet ( Hoja de datos )
| Número de pieza | SQJ940EP | |
| Descripción | Automotive Dual N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
SQJ940EP
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
40 40
0.0160
0.0064
0.0188
0.0076
15 18
Dual N
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® SO-8L Asymmetric
6.15mm
4
G2 3
S2 2
G1
5.13mm
D2
D1
1
S1
Bottom View
D1 D2
G1 G2
S1
N-Channel 1 MOSFET
S2
N-Channel 2 MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L Dual Asymmetric
SQJ940EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL N-CHANNEL 1 N-CHANNEL 2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
40 40
± 20
15 18
15 10.5
15 39
60 72
20.5 35.5
21 63
48 43
16 14
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL 1 N-CHANNEL 2
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
RthJC
70
3.3
70
°C/W
3.5
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S13-0567-Rev. A, 18-Mar-13
1
Document Number: 62767
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
SQJ940EP
Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10 2.0
ID = 14 A
8 1.7 VGS = 10 V
6 1.4 VGS = 4.5 V
4 1.1
2 0.8
0
0
100
369
Qg - Total Gate Charge (nC)
Gate Charge
12
15
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
10
TJ = 150 °C
1
0.08
0.06
0.1
0.01
TJ = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
0.5
0.2
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 μA
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
0.04
TJ = 25 °C
0.02
TJ = 150 °C
0.00
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
52
ID = 1 mA
50
48
46
44
42
40
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-0567-Rev. A, 18-Mar-13
5
Document Number: 62767
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
SQJ940EP
Vishay Siliconix
0.2
0.1
0.1 0.05
0.02
0.01
10- 4
Single Pulse
10- 3
Square Wave Pulse Duration (s)
10- 2
10- 1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62767.
S13-0567-Rev. A, 18-Mar-13
11
Document Number: 62767
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
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| PDF Descargar | [ Datasheet SQJ940EP.PDF ] | |
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