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기능 Automotive Dual N-Channel MOSFET
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SQJ968EP 데이터시트, 핀배열, 회로
www.vishay.com
SQJ968EP
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A) per leg
Configuration
Package
60
0.0336
0.0444
18
Dual
PowerPAK SO-8L
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® SO-8L Dual
D1 D2
6.15 mm
1
Top View
5.13 mm
D1
D2
1
2 S1
3 G1
4 S2
G2
Bottom View
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
TC = 25 °C
TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
60
± 20
18
10.5
23
72
9
4
25
8
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
SYMBOL
RthJA
RthJC
LIMIT
85
6
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-1878-Rev. B, 17-Aug-15
1
Document Number: 62817
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SQJ968EP pdf, 반도체, 판매, 대치품
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10 2.5
ID = 4.5 A
VDS = 30 V
8
ID = 5.3 A
2.1
6 1.7
4 1.3
SQJ968EP
Vishay Siliconix
VGS = 10 V
VGS = 4.5 V
2 0.9
0
0
100
3 6 8 11
Qg - Total Gate Charge (nC)
Gate Charge
14
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.25
10
TJ = 150 °C
1
0.20
0.15
0.1
0.01
TJ = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
0.5
0.2 ID = 5 mA
0.10
0.05
TJ = 150 °C
0.00
0
TJ = 25 °C
246
8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
ID = 1 mA
76
-0.1
ID = 250 μA
-0.4
72
68
-0.7 64
-1.0
-50 -25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
60
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1878-Rev. B, 17-Aug-15
4
Document Number: 62817
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQJ968EP 전자부품, 판매, 대치품
www.vishay.com
REVISION HISTORY a
REVISION
DATE
B 04-Aug-15 • Revised Rg minimum limit
Note
a. As of April 2014
DESCRIPTION OF CHANGE
SQJ968EP
Vishay Siliconix
S15-1878-Rev. B, 17-Aug-15
7
Document Number: 62817
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Automotive Dual N-Channel MOSFET

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