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부품번호 | SQJ980AEP 기능 |
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기능 | Automotive Dual N-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 11 페이지수
www.vishay.com
SQJ980AEP
Vishay Siliconix
Automotive Dual N-Channel 75 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A) per leg
Configuration
75
0.050
0.066
8
Dual
PowerPAK® SO-8L Dual
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
6.15 mm
D
2
4
G2
3
S2
2
G1 1
S1
5.13 mm
D
1
Bottom View
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ980AEP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
LIMIT
75
± 20
17
10
30
68
14
10
34
11
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
85
°C/W
RthJC
4.3
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection..
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S13-0674-Rev. A, 25-Mar-13
1
Document Number: 62833
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
ID = 9.7 A
VDS = 37.5 V
8
2.5
ID = 20 A
2.1
6 1.7
4 1.3
SQJ980AEP
Vishay Siliconix
VGS = 4.5 V
VGS = 10 V
2 0.9
0
0
100
3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
15
0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.50
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
0.5
0.1
0.40
0.30
0.20
0.10
TJ = 150 °C
TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
ID = 1 mA
95
- 0.3
- 0.7
- 1.1
ID = 5 mA
ID = 250 μA
90
85
80
- 1.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
75
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S13-0674-Rev. A, 25-Mar-13
4
Document Number: 62833
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
Ordering Information
Vishay Siliconix
PowerPAK® SO-8L
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQJ200EP
-
SQJ401EP
SQJ401EP-T1-GE3
SQJ402EP
SQJ402EP-T1-GE3
SQJ403EEP
SQJ403EEP-T1-GE3
SQJ403EP
-
SQJ410EP
SQJ410EP-T1-GE3
SQJ412EP
SQJ412EP-T1-GE3
SQJ422EP
SQJ422EP-T1-GE3
SQJ431EP
SQJ431EP-T1-GE3
SQJ443EP
SQJ443EP-T1-GE3
SQJ456EP
SQJ456EP-T1-GE3
SQJ460AEP
-
SQJ461EP
SQJ461EP-T1-GE3
SQJ463EP
SQJ463EP-T1-GE3
SQJ465EP
SQJ465EP-T1-GE3
SQJ469EP
SQJ469EP-T1-GE3
SQJ486EP
SQJ486EP-T1-GE3
SQJ488EP
SQJ488EP-T1-GE3
SQJ500AEP
SQJ500AEP-T1-GE3
SQJ840EP
SQJ840EP-T1-GE3
SQJ844AEP
SQJ844AEP-T1-GE3
SQJ850EP
SQJ850EP-T1-GE3
SQJ858AEP
SQJ858AEP-T1-GE3
SQJ886EP
SQJ886EP-T1-GE3
SQJ910AEP
SQJ910AEP-T1-GE3
SQJ912AEP
SQJ912AEP-T1-GE3
SQJ940EP
SQJ940EP-T1-GE3
SQJ942EP
SQJ942EP-T1-GE3
SQJ951EP
SQJ951EP-T1-GE3
SQJ952EP
-
SQJ960EP
SQJ960EP-T1-GE3
SQJ963EP
SQJ963EP-T1-GE3
SQJ968EP
SQJ968EP-T1-GE3
SQJ980AEP
SQJ980AEP-T1-GE3
SQJ992EP
SQJ992EP-T1-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQJ200EP-T1_GE3
SQJ401EP-T1_GE3
SQJ402EP-T1_GE3
SQJ403EEP-T1_GE3
SQJ403EP-T1_GE3
SQJ410EP-T1_GE3
SQJ412EP-T1_GE3
SQJ422EP-T1_GE3
SQJ431EP-T1_GE3
SQJ443EP-T1_GE3
SQJ456EP-T1_GE3
SQJ460AEP-T1_GE3
SQJ461EP-T1_GE3
SQJ463EP-T1_GE3
SQJ465EP-T1_GE3
SQJ469EP-T1_GE3
SQJ486EP-T1_GE3
SQJ488EP-T1_GE3
SQJ500AEP-T1_GE3
SQJ840EP-T1_GE3
SQJ844AEP-T1_GE3
SQJ850EP-T1_GE3
SQJ858AEP-T1_GE3
SQJ886EP-T1_GE3
SQJ910AEP-T1_GE3
SQJ912AEP-T1_GE3
SQJ940EP-T1_GE3
SQJ942EP-T1_GE3
SQJ951EP-T1_GE3
SQJ952EP-T1_GE3
SQJ960EP-T1_GE3
SQJ963EP-T1_GE3
SQJ968EP-T1_GE3
SQJ980AEP-T1_GE3
SQJ992EP-T1_GE3
Revision: 07-Oct-15
1 Document Number: 65804
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
SQJ980AEP | Automotive Dual N-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |