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부품번호 | SQM200N04-1m8 기능 |
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기능 | Automotive N-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 10 페이지수
www.vishay.com
SQM200N04-1m8
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
ID (A)
Configuration
Package
40
0.0018
200
Single
TO-263-7L
TO-263 7-Lead
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified d
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Top View
D
G
S
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a
TC = 25 °C a
TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
200
192
200
600
85
361
375
125
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1874-Rev. B, 10-Aug-15
1
Document Number: 67184
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10 2.0
ID = 120 A
8
VDS = 20 V
ID = 30 A
1.7
6 1.4
SQM200N04-1m8
Vishay Siliconix
VGS = 10 V
4 1.1
2 0.8
0
0
100
50 100 150 200
Qg - Total Gate Charge (nC)
Gate Charge
250
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.010
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
0.008
0.006
0.004
TJ = 150 °C
0.002
TJ = 25 °C
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.7 54
ID = 10 mA
0.2 52
50
-0.3
ID = 5 mA
48
-0.8
46
-1.3
ID = 250 μA
44
-1.8
-50 -25 0 25 50 75 100 125 150 175
42
-50 -25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1874-Rev. B, 10-Aug-15
4
Document Number: 67184
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
REVISION HISTORY a
REVISION
DATE
B 04-Aug-15 • Revised Rg minimum limit
Note
a. As of April 2014
SQM200N04-1m8
Vishay Siliconix
DESCRIPTION OF CHANGE
S15-1874-Rev. B, 10-Aug-15
7
Document Number: 67184
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
SQM200N04-1m1L | Automotive N-Channel MOSFET | Vishay |
SQM200N04-1m8 | Automotive N-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |