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부품번호 | SQM47N10-24L 기능 |
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기능 | Automotive N-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 11 페이지수
www.vishay.com
SQM47N10-24L
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
Package
TO-263
100
0.024
0.027
47
Single
TO-263
D
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
• Material categorization
for definitions of compliance please see
www.vishay.com/doc?99912
G
Top View
S
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
100
± 20
47
27
47
189
43
92
136
45
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PCB Mount b
SYMBOL
RthJA
RthJC
LIMIT
40
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1874-Rev. D, 10-Aug-15
1
Document Number: 64711
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
3.0 100
ID = 40 A
2.5
2.0
VGS = 10 V
10
1
1.5
0.1
1.0
TJ = 150 °C
0.01
0.5
SQM47N10-24L
Vishay Siliconix
TJ = 25 °C
0
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
0.15
0.5
0.12
0.1
0.09
0.06
0.03
TJ = 150 °C
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
130
ID = 10 mA
124
- 0.3
- 0.7
- 1.1
ID = 5 mA
ID = 250 μA
- 1.5
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
118
112
106
100
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1874-Rev. D, 10-Aug-15
4
Document Number: 64711
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
REVISION HISTORY a
REVISION
DATE
D 04-Aug-15 • Revised Rg minimum limit
Note
a. As of April 2014
SQM47N10-24L
Vishay Siliconix
DESCRIPTION OF CHANGE
S15-1874-Rev. D, 10-Aug-15
7
Document Number: 64711
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
SQM47N10-24L | Automotive N-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |