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PDF IKW50N65EH5 Data sheet ( Hoja de datos )
| Número de pieza | IKW50N65EH5 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-ratedRAPID1
fastandsoftantiparalleldiode
IKW50N65EH5
650VDuoPackIGBTandfull-rateddiode
Highspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page  
IKW50N65EH5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.50mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=50.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.65 2.10
1.85 -
V
- 1.95 -
-
-
1.35 1.70
1.33 -
V
- 1.30 -
3.2 4.0 4.8 V
- 1.0 50.0 µA
- 2000.0 -
- - 100 nA
- 62.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=50.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 3000 -
- 90 - pF
- 12 -
- 120.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 25 - ns
- 29 - ns
- 172 - ns
- 35 - ns
- 1.50 - mJ
- 0.50 - mJ
- 2.00 - mJ
5 Rev.2.1,2015-05-20
5 Page 
IKW50N65EH5
Highspeedseriesfifthgeneration
7
Eoff
Eon
6 Ets
5
4
3
2
1
3.0
Eoff
Eon
Ets
2.5
2.0
1.5
1.0
0.5
0
5 15 25 35 45 55 65 75 85
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=50A,dynamictestcircuitin
Figure E)
3.5
Eoff
Eon
3.0 Ets
0.0
25
50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
175
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
16
VCE = 130V
VCE = 520V
14
12
2.5
10
2.0
8
1.5
6
1.0
4
0.5 2
0.0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
0 20 40 60 80 100 120
QG,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
Figure 16. Typicalgatecharge
(IC=50A)
11
Rev.2.1,2015-05-20
11 Page | ||
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