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PDF MBR6080R Data sheet ( Hoja de datos )
| Número de pieza | MBR6080R | |
| Descripción | Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MBR6045 thru MBR60100R
VRRM = 45 V - 100 V
IF = 60 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
IF,SM
Tj
Tstg
TC ≤ 100 °C
TC = 25 °C, tp = 8.3 ms
45
32
45
60
700
-55 to 150
-55 to 150
60
42
60
60
700
-55 to 150
-55 to 150
80
50
80
60
700
-55 to 150
-55 to 150
100
70
100
60
700
-55 to 150
-55 to 150
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR6045 (R) MBR6060(R) MBR6080 (R) MBR60100 (R) Unit
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
VF IF = 60 A, Tj = 25 °C
IR
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
RthJC
0.65
5
150
1.0
0.75
5
150
1.0
0.84
5
150
1.0
0.84 V
5
150
mA
1.0 °C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBR6080R.PDF ] | |
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