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PDF MBR8030R Data sheet ( Hoja de datos )
| Número de pieza | MBR8030R | |
| Descripción | Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MBR8020 thru MBR8040R
VRRM = 20 V - 40 V
IF(AV) = 80 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Unit
Repetitive peak reverse voltag
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Unit
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum forward voltage
(per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction-
case (per leg)
Mounting torque
IF(AV)
IFSM
VF
IR
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IFM = 80 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
80
1000
0.75
1
10
20
0.50
30
80
1000
0.75
1
10
20
0.50
30
80
1000
0.75
1
10
20
0.50
30
80
1000
0.75
1
10
20
A
A
V
mA
0.50
30
°C/W
Inch ponds
(in-pb)
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBR8030R.PDF ] | |
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