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부품번호 NX18P3001 기능
기능 Bidirectional high-side power switch
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NX18P3001 데이터시트, 핀배열, 회로
NX18P3001
Bidirectional high-side power switch for charger and
USB-OTG combined applications
Rev. 1 — 24 September 2013
Product data sheet
1. General description
The NX18P3001 is an advanced bidirectional power switch and ESD- protection device
for combined USB-OTG and charger port applications. It includes undervoltage lockout,
overvoltage lockout and overtemperature protection circuits designed to automatically
isolate the power switch terminals when a fault condition occurs.
The device features two power switch input/output terminals (VBUSI and VBUSO), an
open-drain acknowledge output (ACK), an enable input which includes logic level
translation (EN) and low capacitance Transient Voltage Suppression (TVS) type ESD
clamps for USB data and ID pins.
When EN is set HIGH the device enters a low-power mode, disabling all protection
circuits. When used in combined charger and USB-OTG applications the 30 V tolerant
VBUSI switch terminal is used as the supply and switch input when charging, for
USB-OTG the VBUSO switch terminal is used as the supply and switch input.
Designed for operation from 3.2 V to 17.5 V, it is used in battery charging and power
domain isolation applications to reduce power dissipation and extend battery life.
2. Features and benefits
30 V tolerant VBUSI supply pin
Wide supply voltage range from 3.2 V to 17.5 V
Automatic switch operation for charging within the supply range
ISW maximum 3 A continuous current
Low ON resistance: 62 m(typical) at a supply voltage of 5.0 V
1.8 V control logic input to open the switch
Soft start turn-on slew rate
Protection circuitry
Overtemperature protection
Overvoltage lockout
Undervoltage lockout
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
CDM AEC standard Q100-01 (JESD22-C101E)
IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUSI, D, D+ and ID
Specified from 40 C to +85 C




NX18P3001 pdf, 반도체, 판매, 대치품
NXP Semiconductors
NX18P3001
Bidirectional power switch for charger and USB-OTG combinations
8. Functional description
Table 4. Function table[1]
EN VBUSI
L < 3.2 V
L 3.2 V < VBUSI < 17.5 V
L < 3.2 V
LX
L > 17.5 V
HX
VBUSO
< 3.2 V
< 3.2 V
> 3.2 V
X
X
X
ACK
Z
Z
Z
0
0
Z
Operation mode
undervoltage lockout; switch open
enabled; switch closed; charging mode
enabled; switch closed; OTG mode
overtemperature protection; switch open
overvoltage lockout; switch open
disabled; switch open
[1] H = HIGH voltage level; L = LOW voltage level, Z = high-impedance OFF-state.
8.1 EN-input
A HIGH on EN disables the N-channel MOSFET and all protection circuits putting the
device into a low-power mode. A LOW on EN enables the protection circuits and then the
N-channel MOSFET.
8.2 Undervoltage lockout
When EN is LOW and VBUSI and VBUSO < 3.2 V, the UnderVoltage LockOut (UVLO)
circuits disable the N-channel MOSFET. Once VBUSI or VBUSO > 3.3 V and no other
protection circuits are active, the state of the N-channel MOSFET is controlled by the EN
pin.
8.3 Overvoltage lockout
When EN is LOW and VBUSI > 17.5 V, the OverVoltage LockOut (OVLO) circuit disables
the N-channel MOSFET and set the ACK output LOW. Once VBUSI < 17.35 V and no
other protection circuits are active, ACK is set high impedance and the state of the
N-channel MOSFET is controlled by the EN pin.
8.4 Overtemperature protection
When EN is LOW and the device temperature exceeds 125 C the OverTemperature
Protection (OTP) circuit disables the N-channel MOSFET and sets the ACK output LOW.
Once the device temperature decreases to below 115 C and no other protection circuits
are active, ACK is set high impedance and the state of the N-channel MOSFET is
controlled by the EN pin.
8.5 ACK output
The ACK output is an open-drain output that requires an external pull-up resistor. If OVLO
or OTP circuits are activated the ACK output is set LOW to indicate that a fault has
occurred. The ACK output returns to high impedance state automatically once the fault
condition is removed or EN is HIGH.
NX18P3001
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 September 2013
© NXP B.V. 2013. All rights reserved.
4 of 21

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NX18P3001 전자부품, 판매, 대치품
NXP Semiconductors
NX18P3001
Bidirectional power switch for charger and USB-OTG combinations
Table 8. Static characteristics …continued
VI(VBUSI) = 4.0 V to 16.0 V or VI(VBUSO) = 4.0 V to 5.5 V; unless otherwise specified; Voltages are referenced to GND
(ground = 0 V).
Symbol Parameter
Conditions
Tamb = 25 C
Tamb = 40 C to +85 C Unit
Min Typ[1] Max
Min
Max
IGND
ground current
EN = LOW; IO = 0 A;
see Figure 6 to Figure 13
- 280
-
-
450 A
EN = HIGH; VI(VBUSx) = 5.5 V; [2]
IO = 0 A; see Figure 6
to Figure 13
-
8
-
-
16 A
EN = HIGH; VI(VBUSI) = 16 V;
IO = 0 A; see Figure 6
to Figure 13
- 20
-
-
33 A
IS(OFF)
OFF-state leakage VI(VBUSI) = 30 V;
current
VI(VBUSO) = 0 V to 5 V;
see Figure 14
[3] -
0.1
-
- 6.5
A
VI(VBUSO) = 5.5 V;
VI(VBUSI) = 0 V to 5 V;
see Figure 15
[4] -
0.1
-
- 8.5
A
VUVLO
undervoltage
lockout voltage
VBUSI; VBUSO; EN = LOW
3.0 3.2 3.4
3.0
3.4 V
Vhys(UVLO) undervoltage
lockout hysteresis
voltage
VBUSI; VBUSO; EN = LOW
- 100
-
-
- mV
VOVLO
overvoltage lockout VBUSI; EN = LOW
voltage
16.5 17.5 18.5
16.5
18.5 V
Vhys(OVLO) overvoltage lockout VBUSI; EN = LOW
hysteresis voltage
- 105
-
-
- mV
CI/O input/output
capacitance
D-; D+; ID; VI(VBUSx) = 5.5 V [2] -
3
-
-
- pF
CI
CS(ON)
input capacitance
ON-state
capacitance
EN
VBUSI; VBUSO
-3
-
- - 0.5
-
-
- pF
0.5 nF
[1] All typical values are measured at VI(VBUSx) = 5.0 V unless otherwise specified.
[2] VBUSx is the supply voltage associated with the input, either VBUSI or VBUSO.
[3] Typical value is measured at VI(VBUSO) = 0 V.
[4] Typical value is measured at VI(VBUSI) = 0 V.
NX18P3001
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 September 2013
© NXP B.V. 2013. All rights reserved.
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NX18P3001

Bidirectional high-side power switch

NXP Semiconductors
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